UNISONIC TECHNOLOGIES CO., LTD
6N60Z
Preliminary
Power MOSFET
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
6N60Z
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
* R
DS(ON)
= 1.5Ω @V
GS
= 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N60ZL-TF3-T
6N60ZG-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-741.a
6N60Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
440
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
Power Dissipation
P
D
40
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
62.5
3.2
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
μA
μA
μA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V, I
D
= 250μA
600
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 20V, V
DS
= 0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.1A
1.0
DYNAMIC CHARACTERISTICS
770
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
95
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
10
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
20
Turn-On Rise Time
t
R
70
V
DD
=300V, I
D
=6.2A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
40
Turn-Off Fall Time
t
F
45
20
Total Gate Charge
Q
G
V
DS
=480V, I
D
=6.2A,
Gate-Source Charge
Q
GS
4.9
V
GS
=10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
9.4
10
5
-5
4.0
1.5
1000
120
13
50
150
90
100
25
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QW-R502-741.a
6N60Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 6.2 A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
1.4
6.2
24.8
290
2.35
V
A
A
ns
μC
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3 of 6
QW-R502-741.a
6N60Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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4 of 6
QW-R502-741.a
6N60Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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5 of 6
QW-R502-741.a
Microchip MCU
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