UNISONIC TECHNOLOGIES CO., LTD
6N70
6.0A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
6N70
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC
6N70
is universally applied in high efficiency switch
mode power supply.
Power MOSFET
FEATURES
* R
DS(ON)
<1.8Ω @ V
GS
=10V, I
D
=3A
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
TO-220F2
TO-220F
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
6N70L-TF1-T
6N70G-TF1-T
6N70L-TF2-T
6N70G-TF2-T
6N70L-TF3-T
6N70G-TF3-T
6N70L-T2Q-T
6N70G-T2Q-T
6N70L-TQ2-T
6N70G-TQ2-T
6N70L-TQ2-R
6N70G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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1 of 6
QW-R502-710.H
6N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified)
SYMBOL
V
DSS
V
GSS
T
C
=25°C
T
C
=100°C
I
D
RATINGS
700
±30
6
3.8
24
6
582
13
2.5
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
PARAMETER
Drain-Source Voltage
Gate-Source Voltage (Note 2)
Drain Current
Continuous
Pulsed
I
DM
Avalanche Current (Note 2)
I
AR
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
TO-220F1
42
TO-220F2
W
Power Dissipation
TO-220F
40
TO-262/ TO-263
125
P
D
TO-220F1
0.33
TO-220F2
W/°C
Linear Derarting Factor
TO-220F
0.32
TO-262/TO-263
1
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 6A, V
DD
= 50V, R
G
= 27Ω, Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤140A/µs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
TO-220F1
TO-220F2
TO-220F
TO-262/TO-263
TO-263
RATINGS
62.5
2.9
θ
JC
3.1
1.0
1.0
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
Junction to Ambient
Junction to Case
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2 of 6
QW-R502-710.H
6N70
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Power MOSFET
MIN
700
TYP MAX UNIT
V
0.79
V/°C
25
µA
250 µA
+100 nA
-100 nA
4.0
1.8
1200
115
55
70
90
230
116
140
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
BV
DSS
I
D
=250µA, V
GS
=0V
∆BV
DSS
/∆T
J
I
D
=250µA
V
DS
=700V
I
DSS
V
DS
=560V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA, V
DS
=5V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz (Note 1, 2)
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=350V, I
D
=6A, R
G
=11.5Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=560V,
Gate to Source Charge
Q
GS
I
D
=6A (Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Integral reverse pn-diode in
Maximum Body-Diode Pulsed Current
the MOSFET
I
SM
(Note 3)
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V, T
J
= 25°C
(Note 2)
Body Diode Reverse Recovery Time
t
rr
I
F
=6A, dI
F
/dt=100A/µs,
T
J
= 25°C
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
250µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
2.0
1.5
900
90
18
40
65
190
88
110
9
23.1
6
24
1.4
440
4.05
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-710.H
6N70
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
300nF
V
DS
3mA
Gate Charge Test Circuit
V
DS
R
G
R
D
90%
Gate Charge Waveforms
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
V
DS
R
G
I
D
BV
DSS
L
I
AS
Resistive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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4 of 6
QW-R502-710.H
6N70
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-710.H
传感器
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