1N4148WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• These diodes are also available in other
case styles including the DO35 case
e3
with the type designation 1N4148, the
MiniMELF case with the type
designation LL4148, and the SOT23 case with the
type designation IMBD4148-V
• Silicon epitaxial planar diode
• Fast switching diodes
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD323 plastic case
Weight:
approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4148WS-V
Ordering code
1N4148WS-V-GS18 or 1N4148WS-V-GS08
Type Marking
A2
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Power dissipation
Note:
1)
Valid provided that electrodes are kept at ambient temperature.
f
≥
50 Hz
t < 1 s and T
j
= 25 °C
Test condition
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
P
tot
Value
75
100
150
1)
350
200
1)
Unit
V
V
mA
mA
mW
Document Number 85751
Rev. 1.7, 14-Sep-07
www.vishay.com
1
1N4148WS-V
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Note:
1)
Valid provided that electrodes are kept at ambient temperature.
Test condition
Symbol
R
thJA
T
j
T
stg
Value
650
1)
150
- 65 to + 150
Unit
K/W
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 10 mA
I
F
= 100 mA
V
R
= 20 V
Leakage current
V
R
= 75 V
V
R
= 100 V
V
R
= 20 V, T
j
= 150 °C
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
Reverse recovery time
Rectification efficiency
V
F
= V
R
= 0 V
tested with 50 mA pulses,
t
p
= 0.1 µs, rise time < 30 ns,
f
p
= (5 to 100) kHz
I
F
= 10 mA, I
R
= 1 mA, V
R
= 6 V,
R
L
= 100
Ω
f = 100 MHz, V
RF
= 2 V
Symbol
V
F
V
F
I
R
I
R
I
R
I
R
C
D
V
fr
Min
Typ.
Max
1000
1200
25
5
100
50
4
2.5
Unit
mV
mV
nA
µA
µA
µA
pF
V
t
rr
η½
0.45
4
ns
Rectification Efficiency Measurement Circuit
60
Ω
V
RF
= 2
V
2 nF
5 kΩ
V
O
17436
www.vishay.com
2
Document Number 85751
Rev. 1.7, 14-Sep-07
1N4148WS-V
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
10
3
1.1
T
j
= 25 °C
f = 1 MHz
10
2
T
j
= 100 °C
T
j
= 25 °C
1.0
C
D
(0
V)
I
F
(mA)
C
D
(V
R
)
10
0.9
1
0.8
10
-1
0.7
10
17437
-2
0
1
2
17440
0
2
4
6
8
10
V
F
(V)
V
R
(V)
Figure 1. Forward characteristics
Figure 4. Relative Capacitance vs. Reverse Voltage
10
4
5
2
T
j
= 25 °C
f = 1 kHz
10
4
5
2
10
3
5
10
3
5
I
R
(nA)
r
f
(Ω)
2
2
10
2
5
2
10
2
5
2
10
5
2
10
5
2
V
R
= 20
V
1
10
-2
17438
10
-1
1
10
10
2
17441
0
100
200
I
F
(mA)
T
j
(°C)
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 5. Leakage Current vs. Junction Temperature
250
P
tot
- Power Dissipation (mW)
200
150
100
50
0
0
20324
50
100
150
200
T
amb
- Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85751
Rev. 1.7, 14-Sep-07
www.vishay.com
3
1N4148WS-V
Vishay Semiconductors
100
5
4
3
2
I
v
= t
P
/T
I
FRM
V
=0
t
P
T
t
T = 1/f
P
10
I
FRM
(A)
5
4
3
2
0.1
0.2
0.5
1
5
4
3
2
0.1
10
-5
17442
2
5
10
-4
2
5
10
-3
2
5
10
-2
2
5
10
-1
2
5
1
2
5
10
t
P
(s)
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Package Dimensions
in millimeters (inches)
: SOD323
17443
www.vishay.com
4
Document Number 85751
Rev. 1.7, 14-Sep-07
1N4148WS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85751
Rev. 1.7, 14-Sep-07
www.vishay.com
5
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