电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N4384GP

产品描述1 A, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小1MB,共2页
制造商TAYCHIPST
官网地址http://www.taychipst.com
下载文档 选型对比 全文预览

1N4384GP概述

1 A, SILICON, SIGNAL DIODE, DO-41

文档预览

下载PDF文档
1N4383GP THRU 1N4385GP
1N4585GP THRU 1N4586GP
GLASS PASSIVATED JUNCTION RECTIFIER
200V-1000V
1.0A
FEATURES
• Superectifier
application
structure
for
high
reliability
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC
accordance to WEEE 2002/96/EC
and
in
MECHANICAL DATA
Case:
JEDEC DO-204AC molded plastic over glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
1N
4383GP
1N
4384GP
1N
4385GP
1N
4585GP
1N
4586GP
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
A
=100°C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
(NOTE 1)
V
RRM
V
RMS
V
DC
I
(AV)
200
140
200
400
280
400
600
420
600
1.0
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
I
R(AV)
C
J
R
ΘJA
J
, T
STG
50.0
1.0
5.0
250.0
2.0
275
250
225
15.0
45.0
-65 to +175
200
200
Amps
Volts
µA
µs
µA
pF
°C/W
°C
T
A
=25°C
T
A
=150°C
Maximum full load reverse current full cycle
average at 0.375" (9.5mm) lead length at T
A
=100°C
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
* JEDEC registered values
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

1N4384GP相似产品对比

1N4384GP 14383GP 1N4383GP 1N4385GP 1N4585GP
描述 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1263  1434  2424  2737  793  26  29  49  56  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved