CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4150 THRU 1N4448
HIGH SPEED SWITCHING DIODES
VOLTAGE：50-100V
CURRENT：0.15 to 0.2 A
FEATURES
·Silicon
epitaxial planar diodes
·Low
power loss, high efficiency
·Low
lekage
·Low
forward voltagh
·High
speed switching
·High
current capability
·High
reliability
DO-35
25.0MIN.
L
25.0MIN.
0.52
2.0MAX.
L:
DO-34 DO-35
2.9 4.2
MECHANICAL DATA
·Case:Glass
sealed case
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:
Color band denotes cathode end
·Mounting
position:
Any
·Weight:
0.13 gram
MAX. MAX.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum power dissipation tamb=25°C
Maximum Forward Voltage
Maximum reverse current
Maximum reverse recovery time
Maximum junction capacitance
Notes:
V
RRM
P
tot
V
F
I
R
t
rr
C
J
1N4150
50
500
1.0/200
100/50
4.0
1N4151
75
500
1.0/50
50/50
2.0
4.0
1N4448
100
500
1.0/100
5000/75
4.0
units
V
mW
V/mA
nA/V
nS
pF
1-1N914A,1N914B is same as 1N914, except different forward voltage|:
1N914A-1.0/20 V/mA
1N914B-1.0/100 V/mA
2.Suffix
“M”
stands for
“DO-34”
package. (e.g.:1N4148M)
１
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