Flash, 4MX16, 60ns, CDFP48, DFP-48
| 参数名称 | 属性值 |
| 包装说明 | DFP, |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 60 ns |
| 备用内存宽度 | 8 |
| 启动块 | BOTTOM/TOP |
| JESD-30 代码 | R-CDFP-F48 |
| 长度 | 16 mm |
| 内存密度 | 67108864 bit |
| 内存集成电路类型 | FLASH |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端子数量 | 48 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | ASYNCHRONOUS |
| 组织 | 4MX16 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DFP |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 并行/串行 | PARALLEL |
| 编程电压 | 3.3 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-PRF-38535 Class Q |
| 座面最大高度 | 3.57 mm |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 端子形式 | FLAT |
| 端子节距 | 0.635 mm |
| 端子位置 | DUAL |
| 总剂量 | 10k Rad(Si) V |
| 类型 | NOR TYPE |
| 宽度 | 9.65 mm |
| 5962D1220401QXC | 5962L1220404QXC | 5962L1220403QXC | UT8QNF8M-60XEC | 5962D1220402QXC | |
|---|---|---|---|---|---|
| 描述 | Flash, 4MX16, 60ns, CDFP48, DFP-48 | Flash, 4MX16, 60ns, CDFP48, DFP-48 | Flash, 4MX16, 60ns, CDFP48, DFP-48 | Flash, 4MX16, 60ns, CDFP48, DFP-48 | Flash, 4MX16, 60ns, CDFP48, DFP-48 |
| 包装说明 | DFP, | DFP, | DFP, | DFP-48 | DFP, |
| Reach Compliance Code | unknown | unknown | unknown | unknow | unknown |
| 最长访问时间 | 60 ns | 60 ns | 60 ns | 60 ns | 60 ns |
| 备用内存宽度 | 8 | 8 | 8 | 8 | 8 |
| 启动块 | BOTTOM/TOP | BOTTOM/TOP | BOTTOM/TOP | BOTTOM/TOP | BOTTOM/TOP |
| JESD-30 代码 | R-CDFP-F48 | R-CDFP-F48 | R-CDFP-F48 | R-CDFP-F48 | R-CDFP-F48 |
| 长度 | 16 mm | 16 mm | 16 mm | 16 mm | 16 mm |
| 内存密度 | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bi | 67108864 bit |
| 内存集成电路类型 | FLASH | FLASH | FLASH | FLASH | FLASH |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 48 | 48 | 48 | 48 | 48 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 组织 | 4MX16 | 4MX16 | 4MX16 | 4MX16 | 4MX16 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DFP | DFP | DFP | DFP | DFP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 编程电压 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 座面最大高度 | 3.57 mm | 3.57 mm | 3.57 mm | 3.57 mm | 3.57 mm |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子节距 | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 类型 | NOR TYPE | NOR TYPE | NOR TYPE | NOR TYPE | NOR TYPE |
| 宽度 | 9.65 mm | 9.65 mm | 9.65 mm | 9.65 mm | 9.65 mm |
| ECCN代码 | 3A001.A.2.C | - | - | EAR99 | 3A001.A.2.C |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| 筛选级别 | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class Q | - | MIL-PRF-38535 Class Q |
| 总剂量 | 10k Rad(Si) V | 50k Rad(Si) V | 50k Rad(Si) V | - | 10k Rad(Si) V |
| 厂商名称 | - | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | - |
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