Datasheet> 器件分类 > 分立半导体> 晶体管> SIHLR024-E3

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SIHLR024-E3: 产品描述14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; 产品类别分立半导体晶体管; 文件大小455KB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com; 标准

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SIHLR024-E3概述

14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

14 A, 60 V, 0.1 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA

SIHLR024-E3规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Vishay(威世)
零件包装代码	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）	91 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (Abs) (ID)	14 A
最大漏极电流 (ID)	14 A
最大漏源导通电阻	0.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252
JESD-30 代码	R-PSSO-G2
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	42 W
最大脉冲漏极电流 (IDM)	56 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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IRLR024, IRLU024, SiHLR024, SiHLU024

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 5.0 V

4.5

Single

FEATURES

0.10

•

Dynamic dV/dt rating

Surface mount (IRLR024, SiHLR024)

Straight lead (IRLU024, SiHLU024)

Available in tape and reel

Available

Logic-level gate drive

DS(on)

specified at V

= 4 V and 5 V

Fast switching

Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

D S

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRLU, SiHLU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

IRLR024PbF

SiHLR024-E3

DPAK (TO-252)

SiHLR024TRL-GE3

DPAK (TO-252)

SiHLR024TR-GE3

IRLR024TRPbF

SiHLR024T-E3

IPAK (TO-251)

SiHLU024-GE3

IRLU024PbF

SiHLU024-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB

Maximum Power Dissipation

Maximum Power Dissipation (PCB

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak

Temperature)

for 10 s

Mount)

= 25 °C

dV/dt

, T

stg

Single Pulse Avalanche Energy

at 5.0 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

± 10

9.2

0.33

0.020

2.5

4.5

-55 to +150

260

W/°C

V/ns

°C

UNIT

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 541 μH, R

= 25

,

= 14 A (see fig. 12).

c. I



17 A, dI/dt



140 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S14-1677-Rev. E, 18-Aug-14

Document Number: 91322

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHLR024-E3相似产品对比

	SIHLR024-E3	SIHLR024T	SIHLR024T-E3	SIHLR024	SIHLU024	IRLR024_09
描述	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	3	2
表面贴装	YES	YES	YES	YES	NO	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
是否无铅	不含铅	含铅	不含铅	含铅	含铅	-
是否Rohs认证	符合	不符合	符合	不符合	不符合	-
厂商名称	Vishay(威世)	Vishay(威世)	-	Vishay(威世)	Vishay(威世)	-
零件包装代码	TO-252	TO-252	TO-252	TO-252	TO-251	-
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	-
针数	3	3	3	3	3	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	-
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	-
其他特性	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	-
雪崩能效等级（Eas）	91 mJ	91 mJ	91 mJ	91 mJ	91 mJ	-
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
最小漏源击穿电压	60 V	60 V	60 V	60 V	60 V	-
最大漏极电流 (Abs) (ID)	14 A	14 A	14 A	14 A	14 A	-
最大漏极电流 (ID)	14 A	14 A	14 A	14 A	14 A	-
最大漏源导通电阻	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95代码	TO-252	TO-252	TO-252	TO-252	TO-251	-
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	-
JESD-609代码	e3	e0	e3	e0	e0	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	-
峰值回流温度（摄氏度）	260	240	260	240	240	-
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
最大功率耗散 (Abs)	42 W	42 W	42 W	42 W	42 W	-
最大脉冲漏极电流 (IDM)	56 A	56 A	56 A	56 A	56 A	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
端子面层	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
处于峰值回流温度下的最长时间	40	30	40	30	30	-

SIHLR024-E3

SIHLR024-E3概述

SIHLR024-E3规格参数

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SIHLR024-E3相似产品对比

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