Datasheet> 器件分类 > 分立半导体> 晶体管> SIHFR9210

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SIHFR9210: 产品描述1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA; 产品类别分立半导体晶体管; 文件大小798KB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SIHFR9210概述

1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

1.9 A, 200 V, 3 ohm, P沟道, 硅, POWER, 场效应管, TO-252AA

SIHFR9210规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	300 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (Abs) (ID)	1.9 A
最大漏极电流 (ID)	1.9 A
最大漏源导通电阻	3 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	25 W
最大脉冲漏极电流 (IDM)	7.6 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

- 200

= - 10 V

8.9

2.1

3.9

Single

FEATURES

3.0

•

DPAK

(TO-252)

IPAK

(TO-251)

Dynamic dV/dt Rating

Repetitive Avalanche Rated

Surface Mount (IRFR9210, SiHFR9210)

Straight Lead (IRFU9210, SiHFU9210)

Available in Tape and Reel

P-Channel

Fast Switching

Material categorization: For definitions of compliance

please see

www.vishay.com/doc?99912

DESCRIPTION

The power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

D S

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR9210-GE3

IRFR9210PbF

SiHFR9210-E3

DPAK (TO-252)

SiHFR9210TR-GE3

IRFR9210TRPbF

SiHFR9210T-E3

IPAK (TO-251)

SiHFU9210-GE3

IRFU9210PbF

SiHFU9210-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB

Repetitive Avalanche

Mount)

= 25 °C

Mount)

= 25 °C

dV/dt

, T

stg

for 10 s

Temperature)

Single Pulse Avalanche Energy

Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= - 50 V, starting T

= 25 °C, L = 124 mH, R

= 25

,

= - 1.9 A (see fig. 12).

c. I



- 1.9 A, dI/dt



70 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0166-Rev. C, 04-Feb-13

Document Number: 91281

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

at - 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

- 200

± 20

- 1.9

- 1.2

- 7.6

0.20

0.020

300

- 1.9

2.5

- 5.0

- 55 to + 150

260

W/°C

V/ns

°C

UNIT

SIHFR9210相似产品对比

	SIHFR9210	SIHFR9210-E3	SIHFR9210T	SIHFR9210T-E3	SIHFR9210TL	SIHFU9210	SIHFU9210-E3	IRFR9210TRR
描述	1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	MOSFET P-CH 200V 1.9A DPAK
是否无铅	含铅	不含铅	含铅	不含铅	含铅	含铅	不含铅	-
是否Rohs认证	不符合	符合	不符合	符合	不符合	不符合	符合	-
零件包装代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-251	-
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	-
针数	3	3	3	3	3	3	3	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	-
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	-
雪崩能效等级（Eas）	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	-
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
最小漏源击穿电压	200 V	200 V	200 V	200 V	200 V	200 V	200 V	-
最大漏极电流 (Abs) (ID)	1.9 A	1.9 A	1.9 A	1.9 A	1.9 A	1.9 A	1.9 A	-
最大漏极电流 (ID)	1.9 A	1.9 A	1.9 A	1.9 A	1.9 A	1.9 A	1.9 A	-
最大漏源导通电阻	3 Ω	3 Ω	3 Ω	3 Ω	3 Ω	3 Ω	3 Ω	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-251	-
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	-
JESD-609代码	e0	e3	e0	e3	e0	e0	e3	-
元件数量	1	1	1	1	1	1	1	-
端子数量	2	2	2	2	2	3	3	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	-
峰值回流温度（摄氏度）	240	260	240	260	240	240	260	-
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	-
最大功率耗散 (Abs)	25 W	25 W	25 W	25 W	25 W	25 W	25 W	-
最大脉冲漏极电流 (IDM)	7.6 A	7.6 A	7.6 A	7.6 A	7.6 A	7.6 A	7.6 A	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
表面贴装	YES	YES	YES	YES	YES	NO	NO	-
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	-
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	-
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
处于峰值回流温度下的最长时间	30	40	30	40	30	30	40	-
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Base Number Matches	1	1	1	1	1	1	1	-

SIHFR9210

SIHFR9210概述

SIHFR9210规格参数

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SIHFR9210相似产品对比

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