6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
6.2 A, 600 V, 1.2 ohm, N沟道, 硅, POWER, 场效应管, TO-262AA
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
零件包装代码 | D2PAK |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 4 |
Reach Compliance Code | unknow |
其他特性 | AVALANCHE RATED |
雪崩能效等级(Eas) | 570 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 600 V |
最大漏极电流 (Abs) (ID) | 6.2 A |
最大漏极电流 (ID) | 6.2 A |
最大漏源导通电阻 | 1.2 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-263AB |
JESD-30 代码 | R-PSSO-G2 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 240 |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 130 W |
最大脉冲漏极电流 (IDM) | 25 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | 30 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
SIHFBC40S | SIHFBC40L | SIHFBC40L-E3 | SIHFBC40S-E3 | SIHFBC40STL | SIHFBC40STL-E3 | IRFBC40STRR | |
---|---|---|---|---|---|---|---|
描述 | 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA | 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA | 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA | 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA | 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA | 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA | MOSFET N-CH 600V 6.2A D2PAK |
是否无铅 | 含铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | 不含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 符合 | 符合 | 不符合 | 符合 | 不符合 |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 4 | 3 | 3 | 4 | 4 | 4 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknown |
其他特性 | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
雪崩能效等级(Eas) | 570 mJ | 570 mJ | 570 mJ | 570 mJ | 570 mJ | 570 mJ | 570 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
最大漏极电流 (Abs) (ID) | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A |
最大漏极电流 (ID) | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A |
最大漏源导通电阻 | 1.2 Ω | 1.2 Ω | 1.2 Ω | 1.2 Ω | 1.2 Ω | 1.2 Ω | 1.2 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 3 | 3 | 2 | 2 | 2 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 240 | 240 | 260 | 260 | 240 | 260 | 225 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 130 W | 130 W | 130 W | 130 W | 130 W | 130 W | 130 W |
最大脉冲漏极电流 (IDM) | 25 A | 25 A | 25 A | 25 A | 25 A | 25 A | 25 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | NO | NO | YES | YES | YES | YES |
端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 30 | 30 | 40 | 40 | 30 | 40 | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
零件包装代码 | D2PAK | TO-262AA | TO-262AA | D2PAK | D2PAK | D2PAK | - |
外壳连接 | DRAIN | - | - | DRAIN | DRAIN | DRAIN | DRAIN |
JEDEC-95代码 | TO-263AB | TO-262AA | TO-262AA | TO-263AB | TO-263AB | TO-263AB | - |
JESD-609代码 | e0 | e0 | e3 | e3 | e0 | e3 | - |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | - |
湿度敏感等级 | - | - | 1 | 1 | - | 1 | 1 |
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