IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
12
3.8
5.1
Single
- 60
0.50
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRF9Z14S, SiHF9Z14S)
• Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of is
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
The through-hole version (IRF9Z14L, SiHF9Z14L) is
available for low-profile applications.
D
2
PAK (TO-263)
SiHF9Z14STRL-GE3
a
IRF9Z14STRLPbF
a
SiHF9Z14STL-E3
a
I
2
PAK (TO-262)
SiHF9Z14L-GE3
IRF9Z14LPbF
SiHF9Z14L-E3
DESCRIPTION
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
S
G
G
D
S
G
D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF9Z14S-GE3
IRF9Z14SPbF
SiHF9Z14S-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
e
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
Current
a, e
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
LIMIT
- 60
± 20
- 6.7
- 4.7
- 27
0.29
140
- 6.7
4.3
43
3.7
- 4.5
- 55 to + 175
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
dV/dt
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 3.6 mH, R
g
= 25
,
I
AS
= - 6.7 A (see fig. 12).
c. I
SD
- 6.7 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z14, SiHF9Z14 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91089
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
40
3.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
t
rr
Q
rr
t
on
T
J
= 25 °C, I
F
= - 6.7 A, dI/dt = 100 A/μs
b, c
-
-
80
96
160
190
ns
nC
Current
a
I
S
I
SM
V
SD
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
V
GS
= 0, I
D
= - 250 μA
Reference to 25 °C, I
D
= - 1 mA
c
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= - 48 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= - 10 V
I
D
= - 4.0 A
b
V
DS
= - 25 V, I
D
= - 4.0 A
c
- 60
-
- 2.0
-
-
-
-
1.4
-
- 0.06
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.5
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
c
-
-
-
-
270
170
31
-
-
-
11
63
10
31
7.5
-
-
-
12
3.8
5.1
-
-
-
-
-
nH
ns
nC
pF
V
GS
= - 10 V
I
D
= - 6.7 A, V
DS
= - 48 V,
see fig. 6 and 13
b, c
-
-
-
V
DD
= - 30 V, I
D
= - 6.7 A,
R
g
= 24
,
R
D
= 4.0
,
see fig. 10
b
-
-
-
Between lead, and center of die contact
-
-
-
-
-
-
-
- 6.7
A
- 27
- 5.5
V
G
S
T
J
= 25 °C, I
S
= - 6.7 A, V
GS
= 0 V
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. Uses IRF9Z14, SiHF9Z14 data and test conditions.
www.vishay.com
2
Document Number: 91089
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
- I
D
, Drain Current (A)
- I
D
, Drain Current (A)
10
1
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
Top
10
1
25
°
C
10
0
175
°
C
10
0
- 4.5 V
10
-1
10
-1
10
0
20 µs Pulse Width
T
C
=
25 °C
10
1
10
-1
20 µs Pulse Width
V
DS
= - 25
V
4
5
6
7
8
9
10
91089_01
- V
DS
, Drain-to-Source Voltage (V)
91089_03
- V
GS,
Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
1
- I
D
, Drain Current (A)
10
0
V
GS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= - 6.7 A
V
GS
= - 10 V
10
-1
10
-1
91089_02
20 µs Pulse Width
T
C
=
175 °C
10
0
10
1
0.0
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
- V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
91089_04
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91089
S11-1052-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
600
- I
SD
, Reverse Drain Current (A)
480
Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
1
175
°
C
25
°
C
10
0
360
C
iss
240
C
oss
120
C
rss
0
10
0
91089_05
10
-1
10
1
1.0
91089_07
V
GS
= 0 V
2.0
3.0
4.0
5.0
6.0
- V
DS,
Drain-to-Source Voltage (V)
- V
SD
, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
- V
GS
, Gate-to-Source Voltage (V)
I
D
= - 6.7 A
V
DS
= - 48 V
V
DS
= - 30 V
10
2
5
Operation in this area limited
by R
DS(on)
10
µs
- I
D
, Drain Current (A)
16
2
12
100
µs
10
5
8
1
ms
T
C
= 25
°C
T
J
= 175
°C
Single Pulse
1
2
5
4
For test circuit
see figure 13
2
10
ms
2
5
0
0
91089_06
1
3
6
9
12
15
91089_08
10
10
2
Q
G
, Total Gate Charge (nC)
- V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91089
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
R
D
V
DS
7.5
R
g
V
GS
D.U.T.
+
-
V
DD
- I
D
, Drain Current (A)
6.0
- 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
4.5
3.0
Fig. 10a - Switching Time Test Circuit
1.5
V
GS
0.0
25
50
75
100
125
150
175
10 %
t
d(on)
t
r
t
d(off)
t
f
91089_09
T
C
, Case Temperature (°C)
90 %
V
DS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-5
10
-4
10
-3
10
-2
0.1
1
10
10
-2
91089_11
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary t
p
to obtain
required I
AS
R
g
V
DS
I
AS
D.U.T.
I
AS
V
DS
-
+ V
DD
V
DD
t
p
- 10 V
t
p
0.01
Ω
V
DS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91089
S11-1052-Rev. C, 30-May-11
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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