DOCUMENT
REVISION
: SIG252012-XXX
: A4
: 1 OF 11
SPECIFICATION FOR APPROVAL
SIG252012-XXX
1. Features
PAGE
Sealed Choke Coil
Low profile：2.5mm
x
2.0mm
x
1.2mm
Low coil resistance with large currents.
High magnetic shield construction should actualize high resolution for EMC protection.
100% lead (Pb) free meet RoHS standard
2. Application
Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..
3. Type Designation
SIG
252012
–
(1)
(2)
Where
XXX
(3)
(1) Series No :
(2) Size :
252012 = 2.5mm
x
2.0mm
x
1.2mm
(3) Inductance Value :
3R3 = 3.3µH
4. Outline Dimensions
W
Code
L
W
T
P
Dimensions (mm)
2.0
±
0.1
2.5
±
0.1
1.2 Max
0.4
±
0.2
L
P
P
T
Note：This graph is only regard to dimensions spec. For outer appearance, please refer to actual product.
DOCUMENT
REVISION
: SIG252012-XXX
: A4
: 2 OF 11
SPECIFICATION FOR APPROVAL
5. Recommend Land Pattern Dimensions
PAGE
The customer shall determine the land dimensions shown above after confirming and safety.
B
A
A
C
2.1
0.8
2.6
Unit : mm
B
C
6. Specifications
L0
Inductance
(
µH
)
@ (0A)
0.22
0.47
0.50
0.68
1.0
1.2
1.5
2.2
3.3
4.7
5.6
6.8
8.2
10.0
22.0
R
dc
( mΩ)
Typical
31
47
56
65
73
93
105
129
227
338
375
510
590
630
2,170
Maximum
38
56
67
78
88
112
126
155
272
406
450
612
708
756
2,604
Heat Rating Current DC
Amps. Idc ( A )
Typical
3.50
2.20
2.15
2.10
1.80
1.60
1.50
1.30
1.00
0.81
0.72
0.66
0.62
0.59
0.30
Maximum
3.15
1.98
1.93
1.89
1.62
1.44
1.35
1.17
0.90
0.73
0.65
0.60
0.55
0.53
0.27
Saturation Current
DC Amps. Isat ( A )
Typical
4.50
3.70
3.50
3.40
2.70
2.35
2.20
2.00
1.60
1.30
1.15
1.10
0.95
0.90
0.50
Maximum
4.05
3.33
3.15
3.06
2.43
2.11
1.98
1.80
1.44
1.17
1.03
0.99
0.85
0.81
0.45
Part Number
SIG252012-R22
SIG252012-R47
SIG252012-R50
SIG252012-R68
SIG252012-1R0
SIG252012-1R2
SIG252012-1R5
SIG252012-2R2
SIG252012-3R3
SIG252012-4R7
SIG252012-5R6
SIG252012-6R8
SIG252012-8R2
SIG252012-100
SIG252012-220
*
：If
you require another part number please contact with us.
**：Inductance Tolerance
±
20%
Note 1.： All test data is referenced to 25℃ ambient.
Note 2.： Idc : DC current (A) that will cause an approximate
△T
of 40℃
Note 3.： Isat : DC current (A) that will cause Lo to drop approximately 30%
Note 4.： Operating Temperature Range -55℃ to + 125℃
Note 5.： The part temperature (ambient + temp rise ) should not exceed 125℃ under worse case operating
conditions. Circuit design , component placement, PWB trace size and thickness, airflow and other
cooling provision all affect the part temperature. Part temperature should be verified in the end
application.
Note 6.：
The rated current as listed is either the saturation current or the heating current depending
on which value is lower.
DOCUMENT
REVISION
: SIG252012-XXX
: A4
: 4 OF 11
SPECIFICATION FOR APPROVAL
4.00
3.50
INDUCTANCE(µH)
TEMP RISE(
℃
)
INDUCTANCE(µH)
PAGE
SIG252012-3R3
100
80
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0
0.2
0.4
SIG252012-4R7
100
80
60
TEMP RISE(
℃
)
TEMP RISE(℃)
TEMP RISE(
℃
)
3.00
2.50
2.00
1.50
1.00
0.50
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
DC BIAS(Amps)
INDUCTANCE(µH)
TEMP RISE (℃)
60
40
20
0
INDUCTANCE(µH)
TEMP RISE (℃)
40
20
0
0.6
0.8
DC BIAS(Amps)
1.0
1.2
1.4
7.00
6.00
INDUCTANCE(µH)
SIG252012-5R6
100
INDUCTANCE(µH)
80
TEMP RISE(
℃
)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
INDUCTANCE(µH)
TEMP.RISE(℃)
SIG252012-6R8
100
80
60
40
20
0
5.00
4.00
3.00
2.00
1.00
0.0
0.2
0.4
0.6
0.8
DC BIAS(Amps)
1.0
1.2
INDUCTANCE(µH)
TEMP RISE (℃)
60
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
DC BIAS(Amps)
9.60
INDUCTANCE(µH)
8.00
6.40
4.80
3.20
1.60
0.00
INDUCTANCE(µH)
TEMP.RISE(℃)
SIG252012-8R2
100
80
TEMP RISE(℃)
INDUCTANCE(µH)
10.5
9.0
7.5
6.0
4.5
3.0
1.5
INDUCTANCE(µH)
TEMP.RISE(℃)
SIG252012-100
100
80
60
40
20
0
60
40
20
0
0.0
0.0
0.1
0.2
0.3
0.4 0.5 0.6
DC BIAS(Amps)
0.7
0.8
0.9
1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
DC BIAS(Amps)
25.0
INDUCTANCE(µH
20.0
15.0
)
10.0
5.0
0.0
0.00
0.10
SIG252012-220
100
80
60
TEMP RISE(℃)
INDUCTANCE(µH)
TEMP RISE (
℃
)
40
20
0
0.20
0.30
0.40
0.50
0.60
DC BIAS(Amps)
嵌入式系统
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