b. Guaranteed by design, not subject to production testing
S09-0227-Rev. E, 09-Feb-09
Document Number: 71625
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7850DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.8 A, di/dt = 100 A/μs
V
DD
= 30 V, R
L
= 30
I
D
1 A, V
GEN
= 10 V, R
g
= 6
V
DS
= 30 V, V
GS
= 10 V, I
D
= 10.3 A
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10.3 A
V
GS
= 4.5 V, I
D
= 8.7 A
V
DS
= 15 V, I
D
= 10.3 A
I
S
= 3.8 A, V
GS
= 0 V
MIN.
60
1
-
-
-
40
-
-
-
-
-
-
-
0.5
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.018
0.025
26
0.85
18
3.4
5.3
1.4
10
10
25
12
50
MAX.
-
3
± 100
1
20
-
0.022
0.031
-
1.2
27
-
-
2.2
20
20
50
24
80
ns
nC
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Diode forward voltage
Dynamic
b
a
V
nA
μA
A
S
V
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain reverse recovery time
Notes
a. Pulse test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0227-Rev. E, 09-Feb-09
Document Number: 71625
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7850DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 5 V
32
I
D
- Drain Current (A)
10
V
DS
= 30 V
I
D
= 10.3 A
Vishay Siliconix
V
GS
- Gate-to-Source Voltage (V)
8
24
4V
16
6
4
8
3V
0
0.0
2
0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Output Characteristics
40
50
Gate Charge
32
I
S
- Source Current (A)
I
D
- Drain Current (A)
T
J
= 150 °C
10
24
T
J
= 25 °C
16
T
C
= 150 °C
8
25 °C
0
0
1
2
3
4
5
- 55 °C
1
0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Transfer Characteristics
0.06
1400
1200
1000
800
600
400
Source-Drain Diode Forward Voltage
0.05
R
DS(on)
- On-Resistance ()
C - Capacitance (pF)
0.04
V
GS
= 4.5 V
0.03
V
GS
= 10 V
C
iss
0.02
0.01
C
oss
200
C
rss
0
0
8
16
24
32
40
0
10
20
30
40
50
60
0.00
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S09-0227-Rev. E, 09-Feb-09
Document Number: 71625
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7850DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
V
GS
= 10 V
I
D
= 10.3 A
Vishay Siliconix
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-50
I
D
= 250 µA
-25
0
25
50
75
100
125
150
V
GS(th)
Variance (V)
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
0.06
Threshold Voltage
100
0.05
R
DS(on)
- On-Resistance ()
80
0.04
Power (W)
I
D
= 10.3 A
0.03
60
40
0.02
20
0.01
0.00
0
2
4
6
8
10
0
0.01
0.1
1
Time (s)
10
100
600
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
S09-0227-Rev. E, 09-Feb-09
Document Number: 71625
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71625.
S09-0227-Rev. E, 09-Feb-09
Document Number: 71625
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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