Si6965DQ
Vishay Siliconix
P-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
V
DS
(V)
–20
r
DS(on)
(W)
0.035 @ V
GS
= –4.5 V
0.060 @ V
GS
= –2.5 V
I
D
(A)
"5.0
"3.9
S
1
S
2
TSSOP-8
D
S
1
S
1
G
1
1
2
3
4
Top View
D
P-Channel MOSFET
D
P-Channel MOSFET
D
8
D
S
2
S
2
G
2
G
1
G
2
Si6965DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–20
"12
"5.0
"4.0
"30
–1.5
1.5
0.96
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t
v
10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70798
S-56943—Rev. B, 02-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
Typical
Maximum
83
Unit
_C/W
85
2-1
Si6965DQ
Vishay Siliconix
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –5.0 A
V
GS
= –2.5 V, I
D
= –3.9 A
V
DS
= –10 V, I
D
= –5.0 A
I
S
= –1.5 A, V
GS
= 0 V
–30
0.028
0.043
15
–0.72
–1.2
0.035
0.060
W
S
V
–0.6
"100
–1
–5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.5 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
10 V,
I
D
^
–1 A, V
GEN
= –4.5 V R
G
= 6
W
1A
4 5 V,
V
DS
= –10 V V
GS
= –10 V I
D
= –5.0 A
10 V,
10 V,
50
17.5
4.6
3.4
25
30
110
65
30
50
60
200
120
60
ns
30
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70798
S-56943—Rev. B, 02-Nov-98
Si6965DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 3 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
2.5 V
18
24
30
Transfer Characteristics
18
12
2V
6
1.5 V
0
0
2
4
6
8
10
12
T
C
= 125_C
6
25_C
–55_C
0
0
0.6
1.2
1.8
2.4
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
3000
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.16
C – Capacitance (pF)
2500
C
iss
2000
0.12
V
GS
= 2.5 V
0.08
V
GS
= 4.5 V
0.04
1500
1000
C
oss
500
C
rss
0
4
8
12
16
20
0
0
6
12
18
24
30
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
4.5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 5.0 A
Gate Charge
1.8
1.6
1.4
1.2
1.0
0.8
0.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.0 A
3.6
2.7
1.8
0.9
0
0
5
10
15
20
r
DS(on)
– On-Resistance (
W)
(Normalized)
0.4
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70798
S-56943—Rev. B, 02-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si6965DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
0.08
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
I
S
– Source Current (A)
10
r
DS(on)
– On-Resistance (
W
)
0.06
I
D
= 5.0 A
0.04
T
J
= 25_C
0.02
1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.8
0.6
0.4
0.2
–0.0
–0.2
–0.4
–0.6
–50
5
Power (W)
I
D
= 250
mA
30
25
Single Pulse Power
V
GS(th)
Variance (V)
20
15
10
0
–25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 85_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70798
S-56943—Rev. B, 02-Nov-98
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
