Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a
Maximum Power Dissipation (Schottky)
a
a
Symbol
V
DS
V
KA
V
GS
T
A
= 25 °C
T
A
= 85 °C
I
D
I
DM
I
S
I
F
I
FM
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
T
J
, T
stg
P
D
5s
20
20
±8
5.9
4.2
20
1.8
1.0
7
2.1
1.1
1.9
1.0
Steady State
Unit
V
4.4
3.1
0.9
A
1.1
0.6
1.1
0.56
- 55 to 150
W
°C
260
Soldering Recommendations (Peak Temperature)
b, c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Operating Junction and Storage Temperature Range
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
1
Si5856DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
≤
5s
Junction-to-Ambient
a
Steady State
Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
R
thJF
R
thJA
Symbol
Typical
50
54
90
95
30
30
Maximum
60
65
110
115
40
40
°C/W
Unit
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Test Conditions
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 4.4 A
V
GS
= 2.5 V, I
D
= 4.1 A
V
GS
= 1.8 V, I
D
= 1.9 A
V
DS
= 10 V, I
D
= 4.4 A
I
S
= 1.0 A, V
GS
= 0 V
Min.
0.4
Typ.
Max.
1.0
± 100
1
5
Unit
V
nA
µA
A
20
0.032
0.036
0.042
22
0.8
5
1.2
7.5
0.040
0.045
0.052
Ω
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.4 A
0.85
1
20
30
55
45
20
90
nC
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 6
Ω
I
F
= 0.9 A, dI/dt = 100 A/µs
36
30
12
45
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SMT贴片机是表面贴装技术（Surface Mount Technology）中的重要设备，它的性能状态对电子制造的质量和效率有着决定性的影响。因此，对SMT贴片机的主要指标性能进行定期检测非常重要。以下是一些主要的检测项目： 定位精度：定位精度是SMT贴片机的核心性能指标，它直接影响到贴片的准确性。通常，我们通过重复测量贴片机在X、Y轴上的移动误差来检测其定位精度。 贴片速度：贴片速度...[详细]
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