Si4835BDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
0.030 @ V
GS
= - 4.5 V
- 7.5
FEATURES
I
D
(A)
- 9.6
r
DS(on)
(W)
0.018 @ V
GS
= - 10 V
D
TrenchFETr Power MOSFET
D
Advanced High Cell Density Process
APPLICATIONS
D
Load Switches
- Notebook PCs
- Desktop PCs
S
SO-8
S
S
S
G
1
2
3
4
Top View
P-Channel MOSFET
Ordering Information: Si4835BDY
Si4835BDY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
- 2.1
2.5
1.6
- 55 to 150
- 7.7
- 50
- 1.3
1.5
0.9
W
_C
- 5.9
A
Symbol
V
DS
V
GS
10 secs
Steady State
- 30
"25
Unit
V
- 9.6
- 7.4
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72029
S-31062—Rev. C, 26-May-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
39
70
18
Maximum
50
85
22
Unit
_C/W
C/W
1
Si4835BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"25
V
V
DS
= - 24 V, V
GS
= 0 V
V
DS
= - 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 9.6 A
V
GS
= - 4.5 V, I
D
= - 7.5 A
V
DS
= - 15 V, I
D
= - 9.6 A
I
S
= - 2.1 A, V
GS
= 0 V
- 50
0.014
0.023
30
- 0.8
- 1.2
0.018
0.030
- 1.0
- 3.0
"100
-1
-5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 2.1 A, di/dt = 100 A/ms
V
DD
= - 15 V, R
L
= 15
W
I
D
^
- 1 A, V
GEN
= - 10 V, R
G
= 6
W
1.0
V
DS
= - 15 V, V
GS
= - 5 V, I
D
= - 9.6 A
25
6.5
12.5
2.9
15
13
60
45
45
4.9
25
20
100
70
80
ns
W
37
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 5 V
40
I
D
- Drain Current (A)
4V
I
D
- Drain Current (A)
40
50
Transfer Characteristics
T
C
= - 55_C
25_C
125_C
30
30
20
20
10
3V
0
0
1
2
3
4
5
6
10
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72029
S-31062—Rev. C, 26-May-03
Si4835BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
r
DS(on)
- On-Resistance (
W
)
3200
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.04
2400
C
iss
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
0.01
1600
800
C
rss
0.00
0
10
20
30
40
50
0
0
6
C
oss
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 9.6 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 9.6 A
1.4
6
r
DS(on)
- On-Resistance (
W)
(Normalized)
20
30
40
50
1.2
4
1.0
2
0.8
0
0
10
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.05
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
0.04
I
D
= 9.6 A
0.03
I
S
- Source Current (A)
T
J
= 150_C
10
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72029
S-31062—Rev. C, 26-May-03
www.vishay.com
3
Si4835BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
80
Single Pulse Power, Junction-to-Ambient
0.4
60
V
GS(th)
Variance (V)
I
D
= 250
mA
0.2
Power (W)
40
0.0
20
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
10
-2
10
-1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Safe Operating Area
100
I
DM
Limited
r
DS(on)
Limited
10
I
D
- Drain Current (A)
P(t) = 0.001
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
P(t) = 10
dc
P(t) = 0.0001
1
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72029
S-31062—Rev. C, 26-May-03
Si4835BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72029
S-31062—Rev. C, 26-May-03
www.vishay.com
5
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