Si4702DY
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
V
DS2
(V)
30
r
DS(on)
(W)
0.024 @ V
GS2
= 10 V
0.035 @ V
GS2
= 4.5 V
I
D
(A)
5.5
4.5
5, 6, 7
SO-8
S
1
V
ON/OFF
S
2
S
2
1
2
3
4
Top View
Ordering Information: Si4702DY
Si4702DY-T1 (with Tape and Reel)
8
7
6
5
V
HV
V
IN
V
IN
V
IN
V
IN
8
3, 4
Q2
S
2
V
HV
V
ON/OFF
2
Q1
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Input Voltage
Q2 Gate-Drive Voltage Referenced to S1 or S2
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
W)
Continuous
a
Pulsed
b
Symbol
V
IN
V
HV
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
30
20
8
5.5
"20
- 1.15
1.25
- 55 to 150
3
Unit
V
A
W
_C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t = steady state)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJC
Typical
83
25
Maximum
100
30
Unit
_C/W
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
FL
V
SD
V
IN
= 30 V, V
ON/OFF
= 0 V, V
HV
= 0 V
I
S
= - 1.15 A
0.7
1
1
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
ON Characteristics
On-Resistance
On Resistance (Q2)
On-State (Q2) Drain-Current
r
DS( )
DS(on)
I
D(on)
V
ON/OFF
= 0 V, I
D
= 5.5 A, V
HV
= 10 V, V
S2
= 0 V
V
ON/OFF
= 0 V, I
D
= 4.5 A, V
HV
= 4.5 V, V
S2
= 0 V
V
IN
- V
OUT
v
0.1 V, V
IN
= 5 V, V
ON/OFF
= 0 V V
HV
= 10 V
15
0.019
0.028
0.024
0.035
W
A
Notes
a. Surface Mounted on FR4 Board.
b. Pulse test: pulse width
v300
ms,
duty cycle
v2%.
Document Number: 71293
S-31874—Rev. E, 15-Sep-03
www.vishay.com
1
Si4702DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
V
ON/OFF
= 0 V
V
HV
= 10 V
V
S2
= 0 V
(V)
V
DS
vs. I
D
2.0
V
ON/OFF
= 0 V
V
HV
= 4.5 V
V
S2
= 0 V
V
DS
vs. I
D
0.8
1.6
(V)
0.6
T
J
= 125_C
0.4
T
J
= 25_C
0.2
1.2
T
J
= 125_C
0.8
T
J
= 25_C
0.4
V
DS
0.0
0
6
12
I
D
- (A)
18
24
30
V
DS
0.0
0
6
12
18
I
D
- (A)
24
30
0.10
V
DS
vs. V
HV
0.5
V
DS
vs. V
HV
0.08
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
(V)
0.4
V
ON/OFF
= 0 V
I
DS
= 5 A
V
S2
= 0 V
V
DS
(V)
0.06
T
J
= 125_C
0.04
0.3
T
J
= 125_C
0.2
V
DS
0.02
T
J
= 25_C
0.00
0
3
6
V
HV
- (V)
9
12
0.1
T
J
= 25_C
0.0
0
3
6
V
HV
- (V)
9
12
0.10
r
DS
vs. V
HV
Normalized On-Resistance vs. Junction Temperature
1.8
1.6
1.4
V
HV
= 4.5 V
1.2
1.0
0.8
0.6
- 50
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
r
SS(on)
- On-Resistance (
W
)
0.06
T
J
= 125_C
0.04
0.02
T
J
= 25_C
0.00
0
3
6
V
HV
- (V)
9
12
r
DS(on)
- On-Resistance (
W)
(Normalized)
0.08
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
V
IN
= 10 V
- 25
0
25
50
75
100 125
T
J
- Junction Temperature (_C)
150
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Document Number: 71293
S-31874—Rev. E, 15-Sep-03
Si4702DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
t
d(on)
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
Time (
mS)
V
IN
= 5 V
V
IN
= 3.3 V
20
30
t
rise
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
16
24
Time (
mS)
12
18
V
IN
= 3.3 V
V
IN
= 5 V
8
12
4
6
0
10
30
50
70
R
G
(kW)
90
110
0
10
30
50
70
R
G
(kW)
90
110
0.40
t
d(off)
Variation with R
G
/V
IN
120
100
t
f
Variation with R
G
/V
IN
V
IN
= 5 V
0.32
V
IN
= 5 V
Time (
mS)
0.24
V
IN
= 3.3 V
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
Time (
mS)
80
60
40
20
0
V
IN
= 3.3 V
0.16
0.08
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
0.00
10
30
50
70
R
G
(kW)
90
110
10
30
50
70
R
G
(kW)
90
110
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 83_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Square Wave Pulse Dureation (sec)
Document Number: 71293
S-31874—Rev. E, 15-Sep-03
www.vishay.com
3
Si4702DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
TYPICAL APPLICATION CIRCUIT
12 V
5, 6, 7
V
IN
8
V
HV
2
V
ON/OFF
1
S
1
Q1
Q2
3, 4
S
2
R
L
5-V BUS
NOTE: Voltage difference between pull-up voltage, 12 V, and BUS voltage, 5 V, should be greater than 4.5 V.
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Document Number: 71293
S-31874—Rev. E, 15-Sep-03
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