Si4483EDY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RT1
RT2
RT3
RT4
Junction to
CT1
CT2
CT3
CT4
Ambient
4.9280
26.4288
26.4135
27.3492
Ambient
7.0702 m
45.4725 m
1.8744
4.2541
Case
N/A
N/A
N/A
N/A
Case
N/A
N/A
N/A
N/A
Foot
536.3249 m
4.6553
10.1038
5.6867
Foot
644.2123 µ
65.5331 m
157.8483 m
10.8807 m
Thermal Capacitance (Joules/°C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74105
Revision 01-Sep-05
www.vishay.com
1
Si4483EDY_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RF1
RF2
RF3
RF4
Junction to
CF1
CF2
CF3
CF4
Note: NA indicates not applicable
Ambient
2.6273
27.5087
23.0822
31.8094
Ambient
1.0532 m
30.2590 m
783.3855 m
1.7732
Case
N/A
N/A
N/A
N/A
Case
N/A
N/A
N/A
N/A
Foot
2.7852
8.1195
5.8581
4.2091
Foot
3.5316 m
10.7913 m
104.4945 m
59.3930 m
Thermal Capacitance (Joules/°C)
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com
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Document Number: 74105
Revision 01-Sep-05
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