RU1HL13K
P-Channel Advanced Power MOSFET
MOSFET
Features
• -100V/-13A,
R
DS (ON)
=160mΩ(tpy.)@V
GS
=-10V
R
DS (ON)
=180mΩ(tpy.)@V
GS
=-4.5V
•
Super High Dense Cell Design
•
ESD protected
•
Reliable and Rugged
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO251
Applications
•
Power Management
•
DC/DC Converters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
-100
±20
175
-55 to 175
T
C
=25°C
-13
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=-10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
②
-52
A
A
-13
-9
50
25
3
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
W
°C/W
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
56
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
www.ruichips.com
RU1HL13K
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
C
=25°C Unless Otherwise Noted)
RU1HL13K
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=-250µA
V
DS
= -100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±16V, V
DS
=0V
V
GS
= -10V, I
DS
=-8A
V
GS
= -4.5V, I
DS
=-6A
-100
-1
-30
-1.5
-2
-2.7
±10
160
180
200
250
V
µA
V
µA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=-1A, V
GS
=0V
I
SD
=-13A, dl
SD
/dt=100A/µs
35
65
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-25V,
Frequency=1.0MHz
10
1089
616
191
13
V
DD
=-50V, R
L
=3.8Ω,
I
DS
=-13A, V
GEN
=-10V,
R
G
=6Ω
16
31
18
-1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
Limited by T
Jmax
, I
AS
=15A, V
DD
=-48V, R
G
= 50Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
28
V
DS
=-80V, V
GS
= -10V,
I
DS
=-13A
9
10
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
2
www.ruichips.com
RU1HL13K
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
-I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
-V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
-I
D
- Drain Current (A)
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RU1HL13K
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
-V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
-V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
R
DS(ON)
- On - Resistance (m)
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RU1HL13K
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
-I
S
- Source Current (A)
-V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
-V
DS
- Drain-Source Voltage (V)
-V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
5
www.ruichips.com
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