Preliminary
Datasheet
RJK5012DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
REJ03G1545-0200
Rev.2.00
Jun 30, 2010
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10
s,
duty cycle
1%
Value at Tc = 25C
STch = 25C, Tch
150C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
Note4
I
D
I
D (pulse)
I
DR
Note1
I
DR (pulse)
Note3
I
AP
Note3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note1
Ratings
500
30
12
24
12
24
4
0.88
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Page 1 of 6
RJK5012DPP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.515
1100
120
15
30
23
77
16
29
5.5
13
0.89
280
Max
—
1
0.1
4.5
0.620
—
—
—
—
—
—
—
—
—
—
1.50
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 41.6
Rg = 10
V
DD
= 400 V
V
GS
= 10 V
I
D
= 12 A
I
F
= 12 A, V
GS
= 0
Note5
I
F
= 12 A, V
GS
= 0
di
F
/dt = 100 A/s
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Page 2 of 6
RJK5012DPP
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
100
Maximum Safe Operation Area
Ta = 25°C
10
0
Channel Dissipation Pch (W)
10
μ
s
μ
s
60
Drain Current I
D
(A)
10
m
=1
PW shot)
(1
1
s
40
0.1
Operation in this
area is limited by
0.01
R
DS(on)
20
0
50
100
150
200
0.001
0.1
1
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
Pulse Test
6V
7V
10 V
5.6 V
12
5.4 V
8
5.2 V
4
5.8 V
100
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
20
10
5
2
1
0.5
0.2
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
0.1
V
GS
= 5 V
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
0.5
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
1.6
0.2
0.1
0.05
1.2
I
D
= 12 A
0.8
6A
0.4
Pulse Test
0
−25
0
25
50
75
100 125 150
3A
0.02
0.01
1
3
10
30
Pulse Test
100
300
1000
Drain Current I
D
(A)
Case Temperature Tc (°C)
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Page 3 of 6
RJK5012DPP
Body-Drain Diode Reverse
Recovery Time
1000
10000
3000
V
GS
= 0
f = 1 MHz
Ciss
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
5
2
1
1
3
10
30
100
300
1000
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
1000
300
100
Coss
30
10
3
1
0
100
200
300
Crss
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
800
Reverse Drain Current vs.
Source to Drain Voltage
16
20
I
DR
(A)
I
D
= 12 A
V
DD
= 100 V
250 V
400 V
V
DS
V
GS
Pulse Test
16
600
12
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
12
10 V
8
5V
4
V
GS
= 0 V,
−5
V
0
0.4
0.8
1.2
1.6
2.0
400
8
200
V
DD
= 400 V
250 V
100 V
8
16
24
32
4
0
40
0
Gate Charge
Qg (nC)
Source to Drain Voltage
V
SD
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
Gate to Source Cutoff Voltage
V
GS(off)
(V)
I
D
= 10 mA
4
1 mA
3
0.1 mA
2
1
V
DS
= 10 V
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Page 4 of 6
RJK5012DPP
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
T
C
= 25°C
D=1
0.5
0.2
0.1
0.1
Preliminary
1
0.05
0.02
0.01
0.01
1S
h
P
ot
e
uls
θch–c(t)
=
γ
S
(t)
• θch–c
θch–c
= 4.17°C/W, T
C
= 25°C
P
DM
D = PW
T
PW
T
1m
10 m
100 m
1
10
0.001
10
μ
100
μ
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
Page 5 of 6
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