Preliminary
Datasheet
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
REJ03G0623-0200
Rev.2.00
Jun 30, 2010
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name LDPAK(L))
(Package name LDPAK(S)-(1))
4
4
RENESAS Package code: PRSS0004AE-C
(Package name LDPAK(S)-(2))
4
1
1
2
3
1
2
2
RJK1525DPE
3
3
RJK1525DPJ
D
RJK1525DPF
G
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
ch-c
Tch
Tstg
Ratings
150
30
25
50
25
50
17
21.6
75
1.67
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 1 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DF
trr
Qrr
Min
150
—
—
3.0
7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
12
0.093
680
150
22
22
110
45
12
18
4.5
9
0.95
100
0.4
Max
—
1
0.1
4.5
—
0.110
—
—
—
—
—
—
—
—
—
—
1.50
—
—
Unit
V
A
A
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 12.5 A, V
DS
= 10 V
Note4
I
D
= 12.5 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 12.5 A
V
GS
= 10 V
R
L
= 6
Rg = 10
V
DD
= 120 V
V
GS
= 10 V
I
D
= 25 A
I
F
= 25 A, V
GS
= 0
Note4
I
F
= 25 A, V
GS
= 0
diF/dt = 100 A/s
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 2 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Preliminary
Main Characteristics
Power vs. Temperature Derating
100
Maximum Safe Operation Area
1000
300
75
Ta = 25°C
Pch (W)
I
D
(A)
100
30
10
PW
(1s = 1
ho
t) ms
10
10
0
μ
s
μ
s
Channel Dissipation
Drain Current
50
3
1
area is limited by
0.3
0.1
0.03
0.01
R
DS(on)
Operation in this
25
0
50
100
150
Tc (°C)
200
1
Case Temperature
100 300 1000
30
3
10
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
6.5 V
7V
16
Pulse Test
16
6V
12
10 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
12
Drain Current
8
5.5 V
8
Tc = 75°C
4
25°C
−25°C
4
V
GS
= 5 V
0
4
8
12
Drain to Source Voltage
16
V
DS
(V)
20
0
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
8
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1
V
GS
= 10 V
0.5
6
0.2
0.1
0.05
4
I
D
= 25 A
2
12.5 A
8.5 A
0
4
8
12
16
V
GS
(V)
20
Gate to Source Voltage
0.02
0.01
1
3
10
30
Drain Current
Pulse Test
100 300
I
D
(A)
1000
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 3 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Static Drain to Source on State Resistance
vs. Temperature
0.5
V
GS
= 10 V
Pulse Test
0.4
Preliminary
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
100
30
10
3
1
0.3
0.1
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
I
D
(A)
30
100
75°C
Tc =
−25°C
0.3
25°C
0.2
I
D
= 25 A
12.5 A
8.5 A
0.1
0
−25
0
25
50
75
100 125
Tc (°C)
150
Case Temperature
Drain Current
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain to Source Voltage
100000
30000
Capacitance C (pF)
500
200
100
50
20
10
5
2
1
1
3
10
30
100 300 1000
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
240
16
V
GS
(V)
V
GS
= 0
f = 1 MHz
10000
3000
1000
300
100
30
10
0
50
Drain to Source Voltage
Crss
100
V
DS
(V)
150
Coss
Ciss
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
1000
Switching Characteristics
V
GS
= 10 V, V
DD
= 75 V
PW = 5
μs,
duty < 1 %
R
G
= 10
Ω
tr
V
DS
(V)
I
D
= 25 A
180
V
DD
= 30 V
60 V
120 V
V
DS
V
GS
12
Switching Time t (ns)
Drain to Source Voltage
Gate to Source Voltage
100
tf
td(off)
td(on)
120
8
10
tr
tf
60
V
DD
= 120 V
60 V
30 V
0
4
8
12
16
4
0
20
1
0.1
0.3
Gate Charge
Qg (nC)
1
3
Drain Current
10
30
I
D
(A)
100
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 4 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Reverse Drain Current vs.
Source to Drain Voltage
50
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Preliminary
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V
DS
= 10 V
I
D
= 10 mA
4
1 mA
3
40
Reverse Drain Current
30
20
V
GS
= 0 V
10
10 V
5V
Pulse Test
0
0.4
0.8
1.2
1.6
V
SD
(V)
2.0
Source to Drain Voltage
2
0.1 mA
1
0
-25
0
25
50
75
100 125 150
Tc (°C)
Case Temperature
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Tc = 25°C
1
D=1
0.5
0.2
0.3
0.1
0.1
0.05
0.02
1
0.0
ulse
tp
ho
1s
0.03
0.01
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.67°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.003
0.001
10
μ
100
μ
1m
10 m
Pulse Width
PW (s)
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 75 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 5 of 7
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