Preliminary
Datasheet
RJK1209JPE
120V - 80A - N Channel Power MOS FET
High Speed Power Switching
Features
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : R
DS(on)
= 14 mΩ typ.
Low input capacitance: Ciss = 4600 pF typ
R07DS0691EJ0100
Rev.1.00
Mar 08, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
2, 4
D
1
2
1G
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Notes: 1. PW
≤
10μs duty cycle
≤
1%
2. Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
I
AP Note2
E
AR Note2
Pch
Note3
Tch
Note4
Tstg
Value
120
±20
80
320
80
45
173
150
175
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
•
Channel to case thermal impedance
θch-c:
1.0°C/W
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 1 of 6
RJK1209JPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
5. Pulse test
Symbol
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
14
4600
570
190
65
18
12
30
13
75
8
0.96
100
Max
±10
10
3.6
19
—
—
—
—
—
—
—
—
—
—
1.25
—
Unit
μA
μA
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
GS
=
±20
V, V
DS
= 0
V
DS
= 120 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 40 A, V
GS
= 10 V
Note5
V
DS
= 10V, V
GS
= 0,
f = 1 MHz
V
DD
= 50 V, V
GS
= 10 V,
I
D
= 80 A
I
D
= 40 A, R
L
= 0.75
Ω,
V
GS
= 10 V, R
G
= 4.7
Ω
I
F
= 80 A, V
GS
= 0
Note5
I
F
= 80 A, V
GS
= 0
di
F
/dt = 100 A/μs
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 2 of 6
RJK1209JPE
Preliminary
Main Characteristics
Power vs. Temperature Derating
250
1000
10
μ
s
Maximum Safe Operation Area
Pch (W)
Drain Current I
D
(A)
200
100
1
m
s
10
0
μ
s
10
1
0.1
0.01
0.001
0.1
Tc = 25°C
1 shot Pulse
Operation
in this area
is limited R
DS(on)
PW
Channel Dissipation
150
=
10
m
s
DC
Op
100
er
at
ion
50
0
50
100
150
200
1
10
100
1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
10 V
4.7 V
100
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
80
4.5 V
1
0.1
0.01
0.001
Tc = 175°C
25°C
−40°C
60
40
4.3 V
V
GS
= 4.1 V
Tc = 25°C
Pulse Test
20
0
2
4
6
8
10
0.0001
0
V
DS
= 10 V
Pulse Test
1
2
3
4
5
6
Drain to Source Voltage V
DS
(V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
50
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Tc = 25°C
V
GS
= 10 V
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
40
Tc = 175°C
30
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
10
20
25°C
10
0
0
I
D
= 40 A
Pulse Test
4
8
12
16
20
−40°C
1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 3 of 6
RJK1209JPE
Static Drain to Source On State Resistance
vs. Temperature
50
Pulse Test
V
GS
= 10 V
40 I
D
= 40 A
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
1000
Coss
Crss
100
Tc = 25°C
V
GS
= 0
f = 1 MHz
0
5
10
15
20
25
30
30
20
10
0
−50
10
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Voltage V
GS
(V)
20
100
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
100
80
V
DD
= 50 V
25 V
10 V
V
GS
16
Reverse Drain Current I
DR
(A)
Tc = 25°C
I
D
= 80 A
Tc = 25°C
Pulse Test
80
60
V
DS
12
60
10 V
V
GS
= 0,
−5
V
40
8
40
20
V
DD
= 50 V
25 V
10 V
20
40
60
80
4
0
100
20
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
200
I
AP
= 45 A
V
DD
= 50 V
duty < 0.1 %
Rg
≥
50
Ω
160
120
80
40
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 4 of 6
RJK1209JPE
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
1
D=1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
1
o
sh
tp
e
uls
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.00°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Avalanche Waveform
1
2
L
•
I
AP
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15 V
50
Ω
I
D
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 5 of 6
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
