RE46C311/2
Low-Input Leakage, Rail-to-Rail Input/Output Op Amps
Features
•
•
•
•
•
•
•
Low Quiescent Current: 600 nA/Amplifier (typical)
Rail-to-Rail Input/Output
Gain Bandwidth Product: 10 kHz (typical)
Wide Supply Voltage Range: 1.8V to 5.5V
Unity Gain Stable
Available in Single and Dual Configurations
Temperature Ranges: -10°C to +60°C
Description
The RE46C311/2 family of operational amplifiers (op
amps) from Microchip Technology Inc. operate with a
single-supply voltage as low as 1.8V, while drawing
less than 1 µA (maximum) of quiescent current per
amplifier. These devices are also designed to support
rail-to-rail input and output operation. This combination
of features supports battery-powered and portable
applications.
The RE46C311/2 amplifiers have a gain-bandwidth
product of 10 kHz (typical) and are unity gain stable.
These specifications make these op amps appropriate
for low-frequency applications, such as ionization
smoke detectors and sensor conditioning.
The RE46C311/2 family operational amplifiers are
offered in single (RE46C311), and dual (RE46C312)
configurations.
Applications
• Ionization Smoke Detectors
• Low Leakage High-Impedance Input Circuits
• Battery-Powered Circuits
Design Aids
• MAPS (Microchip Advanced Part Selector)
• Analog Demonstration and Evaluation Boards
• Application Notes
Package Types
RE46C311
PDIP, SOIC
NC 1
V
IN
– 2
8 NC
7 V
DD
6 V
OUT
5 NC
RE46C312
Typical Application
VDD
Ionization
Chamber
-
RE46C31X
+
V
IN
+ 3
V
SS
4
VSS
PDIP, SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
2013 Microchip Technology Inc.
DS25163A-page 1
RE46C311/2
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
††
See
Section 4.1, Rail-to-Rail Input.
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................6.0V
Current at Input Pins .....................................................±2 mA
All Inputs and Outputs .................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ..................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.................................... –65°C to +150°C
Junction Temperature.................................................. +150°C
ESD protection on all pins (HBM; MM)
4
kV; 400V
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2, V
OUT
V
DD
/2, V
L
= V
DD
/2, and R
L
= 1 M to V
L
(refer to
Figure 1-1
and
Figure 1-2).
Parameters
Input Offset
Input Offset Voltage
Drift with Temperature
Power Supply Rejection
Input Leakage Current
V
OS
V
OS
/T
A
PSRR
I
L1
-3
—
70
-0.75
—
Input Leakage Current
Common Mode
Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Range
Common-Mode
Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain
(large signal)
Output
Maximum Output
Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current
per Amplifier
V
DD
I
Q
1.8
0.3
—
0.6
5.5
1.0
V
µA
I
O
= 0
V
OL
, V
OH
I
SC
V
SS
+ 10
—
—
—
5
27
V
DD
- 10
—
—
mV
mA
mA
R
L
= 50 k to V
L
,
0.5V input overdrive
V
DD
= 1.8V
V
DD
= 5.5V
A
OL
85
115
—
dB
R
L
= 50 k to V
L
,
V
OUT
= 0.1V to V
DD
-0.1V
V
CMR
CMRR
V
SS
62
—
86
V
DD
—
V
dB
V
DD
= 5V, V
CM
= 0V to 5.0V
I
L2
Z
CM
Z
DIFF
-100
—
—
—
±2
76
—
3.5
—
10
13
||6
10
13
||6
+3
—
—
0.75
6
100
—
—
nA
||pF
||pF
mV
µV/°C
dB
pA
T
A
= -10°C to +60°C
V
CM
= V
SS
Non Inverting Input only,
V
IN
= V
DD
or V
SS
T
A
= +60°C
Inverting input only
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Leakage Current and Impedance
DS25163A-page 2
2013 Microchip Technology Inc.
RE46C311/2
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 M to V
L
, and C
L
= 60 pF (refer to
Figure 1-1
and
Figure 1-2).
Parameters
AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
E
ni
e
ni
i
ni
—
—
—
5.0
170
0.6
—
—
—
µV
P-P
nV/Hz
fA/Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
SR
PM
—
—
—
10
3.0
65
—
—
—
kHz
V/ms
°
G = +1 V/V
Sym.
Min.
Typ.
Max.
Units
Conditions
TEMPERATURE CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
JA
JA
—
—
89.3
149.5
—
—
°C/W
°C/W
T
A
T
A
-10
-65
—
—
+60
+150
°C
°C
Sym.
Min.
Typ.
Max. Units
Conditions
1.1
Test Circuits
V
DD
/2
R
N
V
DD
0.1 µF 1 µF
V
OUT
RE46C31X
C
L
R
L
V
L
V
OUT
RE46C31X
C
L
R
L
V
L
R
F
R
F
The test circuits used for the DC and AC tests are
shown in
Figure 1-1
and
Figure 1-2.
The bypass
capacitors are laid out according to the rules discussed
in
Section 4.5, Supply Bypass.
V
IN
R
N
V
DD
0.1 µF
1 µF
V
IN
R
G
FIGURE 1-2:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
V
DD
/2 R
G
FIGURE 1-1:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
2013 Microchip Technology Inc.
DS25163A-page 3
RE46C311/2
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 M to V
L
, and C
L
= 60 pF.
2000
Input Offset Voltage (μV)
1500
1000
500
0
-500
-1000
-1500
-2000
-0.4-0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Common Mode Input Voltage (V)
T
A
= +60°C
T
A
= +25°C
T
A
= -10°C
6
Input, Output Voltages (V)
V
DD
=
V
Representative Part
5
4
3
2
1
0
-1
G = 2 V/V
V
DD
= 5V
Input
Output
Time (5 ms/div)
FIGURE 2-1:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 1.8V.
2000
Input Offset Voltage (μV)
V
DD
= 5.5V
Representative Part
FIGURE 2-4:
The RE46C311/2 Family
Shows No Phase Reversal.
100
PSRR, CMRR (dB)
95
90
85
80
75
70
-10
0
10
20
30
40
50
Ambient Temperature (°C)
60
PSRR
CMRR
(V
DD
=5.5V, V
CM
= -0.3V to +5.8V)
1500
1000
500
0
-500
-1000
-1500
T
A
= +60°C
T
A
= +25°C
T
A
= -10°C
-2000
-0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Common Mode Input Voltage (V)
FIGURE 2-2:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 5.5V.
90
FIGURE 2-5:
Temperature.
120
CMRR, PSRR vs. Ambient
0
Open-Loop Gain
Open-Loop Gain (dB)
80
CMRR, PSRR (dB)
70
60
50
40
30
20
1
10
100
Frequency (Hz)
1000
CMRR
PSRR-/+
80
Open-Loop Phase
-60
-90
-120
-150
-180
1.0E+00
60
40
20
0
-20
1.0E-03 1.0E-02 1.0E-01
0.001 0.01 0.1
1
1.0E+01
10
1.0E+02
100
1.0E+03
1k
1.0E+04
-210
1.0E+05
10k 100k
Frequency (Hz)
FIGURE 2-3:
Frequency.
CMRR, PSRR vs.
FIGURE 2-6:
Frequency.
Open-Loop Gain, Phase vs.
DS25163A-page 4
2013 Microchip Technology Inc.
Open-Loop Phase (°)
100
-30
RE46C311/2
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 M to V
L
, and C
L
= 60 pF.
140
DC Open-Loop Gain (dB)
130
120
110
100
90
80
R
L
= 50 k
V
OUT
= 0.1V to V
DD
– 0.1V
1.5
2.0
2.5 3.0 3.5 4.0 4.5 5.0
Power Supply Voltage (V)
5.5
6.0
Output Voltage (5 mV/div)
G = 1 V/V
R
L
= 50 k
Ω
Time (100 μs/div)
FIGURE 2-7:
DC Open-Loop Gain vs.
Power Supply Voltage.
20
18
16
14
100
FIGURE 2-10:
Pulse Response.
G = -1 V/V
R
L
= 50 k
Ω
Small Signal Non-inverting
80
PM
70
60
50
GBWP
40
30
20
V
DD
= 5.5V
Gain = 100
10
12
10
8
6
4
2
0
0
-0.500.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50
Common Mode Voltage (V)
Output Voltage (5 mV/div)
90
Phase Margin (°)
GBWP (kHz)
Time (100 μs/div)
FIGURE 2-8:
Gain Bandwidth Product,
Phase Margin vs. Common Mode Input Voltage.
14
Gain Bandwidth Product (KHz)
12
10
PM
GBWP
FIGURE 2-11:
Response.
5.0
4.5
Output Voltage (V)
G = -1 V/V
R
L
= 50 kΩ
V
DD
= 5.0V
Small Signal Inverting Pulse
90
80
70
60
50
40
30
V
DD
= 5.5V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
-10
0
10
20
30
40
50
Ambient Temperature (°C)
60
20
Phase Margin (°)
Time (1 ms/div)
FIGURE 2-9:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature with
V
DD
= 5.5V.
FIGURE 2-12:
Pulse Response.
Large Signal Non-inverting
2013 Microchip Technology Inc.
DS25163A-page 5
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
