BFY90
MECHANICAL DATA
Dimensions in mm (inches)
4.95 (0.195)
4.52 (0.178)
4.95 (0.195)
4.52 (0.178)
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
5.33 (0.210)
4.32 (0.170)
0.48 (0.019)
0.41 (0.016)
dia.
12.7 (0.500)
min.
DESCRIPTION
The BFY90 is a low noise transistor intended for
use in broad and narrow-band amplifiers up to
1GHz.
2.54 (0.100)
Nom.
4
3
2
1
TO72
Pin 1 – Emitter
Pin 2 –Base
Pin 3 – Collector
Pin 4 – Connected to Case
ABSOLUTE MAXIMUM RATINGS
V
CBO
V
CER
V
CEO
V
EBO
I
C(AV)
I
CM
P
tot
T
j
T
stg,
Collector – Base Voltage
(TA= 25°C unless otherwise stated)
30V
30V
15V
2.5v
25mA
50mA
200mW°C
200°C
–65 to +200°C
Collector – Emitter Voltage (R
BE
£
50
W
)
Collector – Emitter Voltage
Emitter – Base Voltage
Average Collector Current
Peak Collector Current (f
³
1MHz)
Power Dissipation at T
amb
=
25°C
Storage Temperature
Junction Temperature
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 12/99
BFY90
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
Parameter
I
CBO
V
(BR)CEO*
V
(BR)CER*
V
CEK
h
21E
Collector Cut Off Current
Test Conditions
V
CB
= 15V
I
E
= 0
I
B
= 0
R
BE
£
50
W
I
C
= 2mA
I
C
= 25mA
I
C
= 2mA
I
C
= 25mA
I
E
= 0.
I
C
= 0
I
C
= 2mA
R
G
R
G
optimum
Min.
15
30
Typ.
Max.
10
Unit
nA
V
Collector Emitter Breakdown Voltage I
C
= 10mA
Collector Emitter Breakdown Voltage I
C
= 10mA
Collector Emitter Knee Voltage
Static Forward Current Transfer
Ratio
DYNAMIC CHARACTERISTICS
V
CE
= 5V
f = 500MHz
V
CE
= 5V
f = 500MHz
V
CB
= 10V
f = 1MHz
V
CE
= 5V
f = 1MHz
V
CE
= 5V
f = 100kHz
V
CE
= 5V
f = 200MHz
V
CE
= 5V
f = 500MHz
V
CE
= 5V
f = 800MHz
V
CE
= 10V
f = 200MHz
V
CE
= 10V
f
1
= 202MHz
I
C
= 10mA
V
CE
= 1V
V
CE
= 1V
0.75
25
20
150
125
—
1
GHz
1.3
1.5
0.8
4
3.5
dB
5
5
21
dB
pF
pF
f
T
Transition Frequency
C
22b(1)
C
12e(2)
Output Capacitance
Open-Circuit Reverse Transfer
Capacitance
I
C
= 2mA
optimum
NF
Noise Figure
I
C
= 2mA
R
G
= 50
W
I
C
= 2mA
R
G
optimum
Gp
Power Gain
I
C
= 14mA
I
C
= 14mA
f
2
= 205MHz
P
O(2)
Output Power
Output SWR
£
2
TOS sortie
208MHz
£
10
mW
2
d
IM
* = - 30dB at 2 f
2
- f
1
=
THERMAL DATA
R
th(j-a)
R
th(j-c)
Junction-ambient thermal resistance
Junction-case thermal resistance
£
£
0.875 Max
0.575 Max
°C/W
°C/W
* Pulse test t
p
= 300
m
s ,
d £
2%
(1) Shield Lead (case) not connected
* Intermodulation Distortion
(2) Shield Lead (case) grounded
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 12/99
stm32/stm8
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