DISCRETE SEMICONDUCTORS
DATA SHEET
BFT93
PNP 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
November 1992
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and
BFR93A.
PINNING
PIN
1
2
3
base
emitter
collector
1
Top view
BFT93
DESCRIPTION
Code: X1p
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
c
P
tot
f
T
C
re
G
UM
F
V
o
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
up to T
s
= 95
°C;
note 1
I
C
=
−30
mA; V
CE
=
−5
V; f = 500 MHz;
T
j
= 25
°C
I
C
=
−2
mA; V
CE
=
−5
V; f = 1 MHz
open emitter
open base
CONDITIONS
TYP.
−
−
−
−
5
1
16.5
2.4
300
MAX.
−15
−12
−35
300
−
−
−
−
−
UNIT
V
V
mA
mW
GHz
pF
dB
dB
mV
maximum unilateral power gain I
C
=
−30
mA; V
CE
=
−5
V; f = 500 MHz;
T
amb
= 25
°C
noise figure
output voltage
I
C
=
−10
mA; V
CE
=
−5
V; f = 500 MHz;
T
amb
= 25
°C
d
im
=
−60
dB; I
C
=
−30
mA;
V
CE
=
−5
V; R
L
= 75
Ω;
f
(p+q−r)
= 493.25 MHz
Note
1. T
s
is the temperature at the soldering point of the collector tab.
November 1992
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
f
>
1 MHz
up to T
s
= 95
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
MIN.
MAX.
−15
−12
−2
−35
−50
300
150
175
BFT93
UNIT
V
V
V
mA
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 70
°C;
(note 1)
THERMAL RESISTANCE
260 K/W
November 1992
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F
V
o
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-------------------------------------------------------------
dB.
-
=
10 log
2
2
1
–
S
11
1
–
S
22
2
BFT93
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
CONDITIONS
I
E
= 0; V
CB
=
−5
V
I
C
=
−30
mA; V
CE
=
−5
V
I
C
=
−30
mA; V
CE
=
−5
V;
f = 500 MHz
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
c
= i
c
= 0; V
EB
=
−0.5
V; f = 1 MHz
I
C
=
−2
mA; V
CE
=
−5
V; f = 1 MHz
−
MIN.
−
20
−
−
−
−
−
−
−
TYP.
50
5
0.95
1.8
1
16.5
2.4
300
MAX.
−50
−
−
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
mV
maximum unilateral power gain I
C
=
−30
mA; V
CE
=
−5
V;
(note 1)
f = 500 MHz; T
amb
= 25
°C
noise figure
output voltage
I
C
=
−10
mA; V
CE
=
−5
V;
f = 500 MHz; T
amb
= 25
°C
see Fig.2 and note 2
2. d
im
=
−60
dB (DIN 45004B); I
C
=
−30
mA; V
CE
=
−5
V; R
L
= 75
Ω;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 495.25 MHz;
V
q
= V
o
−6
dB; f
q
= 503.25 MHz;
V
r
= V
o
−6
dB; f
r
= 505.25 MHz;
measured at f
(p+q−r
) = 493.25 MHz.
November 1992
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
MEA382
handbook, halfpage
24 V
560
Ω
1.2 kΩ
240
Ω
L2
L1
680 pF
680 pF
output
75
Ω
handbook, halfpage
60
h FE
390
Ω
L3
40
680 pF
input
75
Ω
DUT
20
16
Ω
MEA383
10
0
10
20
30
–I C (mA)
40
L2 = L3 = 5
µH
Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
V
CE
=
−5
V; T
j
= 25
°C.
Fig.2 Intermodulation distortion test circuit.
Fig.3
DC current gain as a function of collector
current.
MEA925
MEA381
2.0
handbook, halfpage
Cc
(pF)
1.6
6
handbook, halfpage
fT
(GHz)
4
1.2
0.8
2
0.4
0
0
4
8
12
16
V CB (V)
20
0
0
10
20
30
–I C (mA)
40
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
V
CE
=
−5
V; f = 500 MHz; T
j
= 25
°C.
Fig.4
Collector capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
November 1992
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
