NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
参数名称 | 属性值 |
厂商名称 | SIEMENS |
包装说明 | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.035 A |
基于收集器的最大容量 | 0.45 pF |
集电极-发射极最大电压 | 12 V |
配置 | SEPARATE, 2 ELEMENTS |
最高频带 | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-PDSO-G6 |
元件数量 | 2 |
端子数量 | 6 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 8000 MHz |
BFS482 | Q62702-F1573 | |
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描述 | NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) | NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) |
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