BFS 17S
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz
at collector currents from 1mA to 20mA
Tape loading orientation
Type
BFS 17S
Marking Ordering Code
MCs
Q62702-F1645
Pin Configuration
Package
1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363
Maximum Ratings of any single Transistor
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Symbol
Values
15
25
2.5
25
50
mA
Unit
V
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
f
≥
10 MHz
Total power dissipation
mW
280
150
- 65 + 150
- 65 ... + 150
≤
240
°C
T
S
≤
83 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
T
j
T
A
T
stg
R
thJS
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
1
Dec-18-1996
BFS 17S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics of any single Transistor
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
15
-
-
-
-
-
70
0.1
-
V
µA
-
-
0.05
10
100
-
20
20
150
-
V
-
0.4
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
I
CBO
V
CB
= 10 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0
Emitter-base cutoff current
I
EBO
-
V
EB
= 2.5 V,
I
C
= 0
DC current gain
h
FE
I
C
= 2 mA,
V
CE
= 1 V
I
C
= 25 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
V
CEsat
I
C
= 10 mA,
I
B
= 1 mA
Semiconductor Group
2
Dec-18-1996
BFS 17S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics of any single Transistor
Transition frequency
Values
typ.
max.
Unit
f
T
1
1.3
1.4
2.5
0.55
0.13
1.45
-
-
-
GHz
I
C
= 2 mA,
V
CE
= 5 V,
f
= 200 MHz
I
C
= 25 mA,
V
CE
= 5 V,
f
= 200 MHz
Collector-base capacitance
C
cb
-
0.8
-
-
1.5
pF
V
CB
= 5 V,
f
= 1 MHz
Collector-emitter capacitance
C
ce
-
V
CE
= 5 V,
f
= 1 MHz
Input capacitance
C
ibo
-
V
EB
= 0.5 V,
I
C
= 0 ,
f
= 1 MHz
Output capacitance
C
obs
-
V
CE
= 5 V,
V
BE
=
v
be
= 0 ,
f
= 1 MHz
Noise figure
F
-
|S
21e
|
2
-
-
18
12
-
-
3.5
5
dB
I
C
= 2 mA,
V
CE
= 5 V,
f
= 800 MHz
Z
S
= 0
Ω
Transducer gain
I
C
= 8 mA,
V
CE
= 8 V,
Z
S
=Z
L
= 50
Ω
f
= 900 MHz
f
= 1.75 GHz
Linear output voltage
V
01
=V
02
-
100
-
mV
I
C
= 14 mA,
V
CE
= 5 V,
d
im
= 60 dB
f
1
= 806 MHz,
f
2
= 810 MHz,
Z
S
=Z
L
= 50
Ω
Third order intercept point
IP
3
-
23
-
dBm
I
C
= 200 mA,
V
CE
= 8 V,
f
= 900 MHz
Z
S
=Z
L
= 50
Ω
Semiconductor Group
3
Dec-18-1996
BFS 17S
Total power dissipation
P
tot
=
f
(T
A
*,
T
S
)
* Package mounted on epoxy
300
mW
P
tot
200
T
S
150
T
A
100
50
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
3
K/W
-
R
thJS
10
2
P
totmax
/P
totDC
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
10
0
10
-1
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
10
0
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
Semiconductor Group
4
Dec-18-1996
BFS 17S
Collector-base capacitance
C
cb
=
f
(V
CB
)
V
BE
=
v
be
= 0,
f
= 1MHz
Transition frequency
f
T
=
f
(I
C
)
V
CE
= Parameter
1.3
pF
1.1
3.0
GHz
C
cb
1.0
0.9
0.8
0.7
f
T
2.0
10V
5V
3V
2V
1.5
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16
20
V
26
V
CB
0.5
1V
0.7V
0.0
0
5
10
15
20
mA
I
C
30
1.0
Semiconductor Group
5
Dec-18-1996
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