4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | National Semiconductor(TI ) |
包装说明 | WDIP, DIP32,.6 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
最长访问时间 | 170 ns |
I/O 类型 | COMMON |
JESD-30 代码 | R-GDIP-T32 |
JESD-609代码 | e0 |
内存密度 | 4194304 bi |
内存集成电路类型 | UVPROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 32 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 512KX8 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | WDIP |
封装等效代码 | DIP32,.6 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE, WINDOW |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 5 V |
认证状态 | Not Qualified |
座面最大高度 | 5.72 mm |
最大待机电流 | 0.0001 A |
最大压摆率 | 0.05 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 15.24 mm |
NM27P040Q170 | NM27P040Q120 | NM27P040Q150 | NM27P040QE150 | NM27P040QE170 | NM27P040QM150 | NM27P040QM200 | NM27P040QXXX | NM27P040 | |
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描述 | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | IC 512K X 8 UVPROM, 170 ns, CDIP32, WINDOWED, CERAMIC, DIP-32, Programmable ROM | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - | 不符合 | 不符合 | - | - |
包装说明 | WDIP, DIP32,.6 | WDIP, DIP32,.6 | WDIP, DIP32,.6 | WDIP, DIP32,.6 | - | WDIP, DIP32,.6 | WDIP, DIP32,.6 | - | - |
Reach Compliance Code | unknow | unknow | unknow | unknow | - | unknow | unknow | - | - |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | - | - |
最长访问时间 | 170 ns | 120 ns | 150 ns | 150 ns | - | 150 ns | 200 ns | - | - |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | - | COMMON | COMMON | - | - |
JESD-30 代码 | R-GDIP-T32 | R-GDIP-T32 | R-GDIP-T32 | R-GDIP-T32 | - | R-GDIP-T32 | R-GDIP-T32 | - | - |
JESD-609代码 | e0 | e0 | e0 | e0 | - | e0 | e0 | - | - |
内存密度 | 4194304 bi | 4194304 bi | 4194304 bi | 4194304 bi | - | 4194304 bi | 4194304 bi | - | - |
内存集成电路类型 | UVPROM | UVPROM | UVPROM | UVPROM | - | UVPROM | UVPROM | - | - |
内存宽度 | 8 | 8 | 8 | 8 | - | 8 | 8 | - | - |
功能数量 | 1 | 1 | 1 | 1 | - | 1 | 1 | - | - |
端子数量 | 32 | 32 | 32 | 32 | - | 32 | 32 | - | - |
字数 | 524288 words | 524288 words | 524288 words | 524288 words | - | 524288 words | 524288 words | - | - |
字数代码 | 512000 | 512000 | 512000 | 512000 | - | 512000 | 512000 | - | - |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | - | - |
最高工作温度 | 70 °C | 70 °C | 70 °C | 85 °C | - | 125 °C | 125 °C | - | - |
组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | - | 512KX8 | 512KX8 | - | - |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | - | - |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | - | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | - | - |
封装代码 | WDIP | WDIP | WDIP | WDIP | - | WDIP | WDIP | - | - |
封装等效代码 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | - | DIP32,.6 | DIP32,.6 | - | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - | - |
封装形式 | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | - | IN-LINE, WINDOW | IN-LINE, WINDOW | - | - |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL | PARALLEL | - | - |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | - |
电源 | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V | - | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | - | - |
座面最大高度 | 5.72 mm | 5.72 mm | 5.72 mm | 5.72 mm | - | 5.72 mm | 5.72 mm | - | - |
最大待机电流 | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | - | 0.0001 A | 0.0001 A | - | - |
最大压摆率 | 0.05 mA | 0.03 mA | 0.05 mA | 0.05 mA | - | 0.03 mA | 0.05 mA | - | - |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | 5.5 V | 5.5 V | - | - |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V | 4.5 V | - | - |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V | - | - |
表面贴装 | NO | NO | NO | NO | - | NO | NO | - | - |
技术 | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS | - | - |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | - | MILITARY | MILITARY | - | - |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | - | - |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | - | 2.54 mm | 2.54 mm | - | - |
端子位置 | DUAL | DUAL | DUAL | DUAL | - | DUAL | DUAL | - | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | - |
宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | - | 15.24 mm | 15.24 mm | - | - |
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