Ge-Avalanche Photodiode in TO Package with
Integrated Optics
SRD 00512Z
•
Designed for application in fiber-optic communication
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systems
Sensitive receiver for the 2
nd
optical window (1300 nm)
High gain-bandwidth product
Suitable for bit rates up to 1.2 Gbit/s and long-haul
transmission
Planar structure
Small radiant sensitive area
Low multiplied dark current
High spectral sensitivity by built-in optics
Hermetically sealed 3-pin metal case
Ordering Code
Q62702-P3042
Connector/Flange
TO, with optics
Type
SRD 00512Z
Maximum Ratings
Parameter
Forward current
Reverse voltage
Operating and storage temperature
Max. radiant power into the opt. port
(
V
R
= 5 V)
Soldering time (wave / dip soldering), distance
between solder point and base plate
(≥ 2 mm, 260 °C)
* Individual value of
V
BR
is delivered with each component.
Symbol
Values
50
*
−
40
…
+ 85
1
10
Unit
mA
V
°C
mW
s
I
F
V
R
T
A
T
stg
Φ
port
t
s
Semiconductor Group
1
02.95
SRD 00512Z
Characteristics
All optical data refer to an optimally coupled 10/125
µm
SM fiber at ambient temperature of
25 °C, unless otherwise defined.
Parameter
Spectral sensitivity
λ
= 1310 nm, M = 1
Rise and fall time (10 %
−
90 %)
R
L
= 50
Ω,
M = 1,
λ
= 1310 nm,
Φ
port
= 100
µW
Multiplication factor at
V
R
= 0.9
V
BR
Breakdown voltage
I
R
= 100
µA
Total capacitance
V
R
= 0.9
V
BR
,
Φ
port
= 0,
f
= 1 MHz
Dark current
V
R
= 10 V
V
R
= 0.9
V
BR
Multiplied dark current (M = 10)
Symbol
Values
0.8 (≥ 0.7)
0.3 (≤ 0.5)
Unit
A/W
ns
S
λ
t
r
;
t
f
M
V
BR
C
I
D
I
DM
4 (≥ 3)
28
…
40
≤
2
< 200
< 300
≤
20
V
pF
nA
nA
nA
Semiconductor Group
2
SRD 00512Z
Rel. Spectral Sensitivity
M
= 1 (
V
R
= 10 V)
Dark Current
I
D
=
I
D
(
V
R
/
V
BR
)
Multiplication Factor
M
=
M
(
V
R
/
V
BR
)
1
100
0.8
10
Rel. Sensitivity
0.6
ID in uA / M
M
ID
0.4
1
0.2
0
800
0.1
1000
1200
1400
1600
0
0.2
0.4
0.6
0.8
1
Wavelength in nm
VR/VBR
Frequency Response of Sensitivity
S
=
S
(
f
),
λ
= 1300 nm
0
-1
-2
-3
Sensitivity in dB
-4
-5
-6
-7
-8
-9
-10
100
Frequency in MHz
M=32
M=2
M=8
Temperatur Behaviour of Breakdown
Voltage
V
BR
/
V
BR(25 °C)
(
T
A
)
1.1
1.05
VBR/VBR(25)
M=16
1
0.95
0.9
10000
-50
-25
0
25
50
75
100
Ambient Temperature in °C
Semiconductor Group
3
SRD 00512Z
Temperature Behaviour of Dark Current
I
D
/
I
D(25 °C)
(
T
A
)
Sensitivity at different input Powers
V
BR
/
V
BR(25 °C)
(
T
A
)
200
180
160
Sensitivity in A/W
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
140
ID/ID(25)
120
100
80
60
40
0.1
20
0
-50
-25
0
25
50
75
100
Popt in W
Ambient Temperature in °C
0
1.00E-07
1.00E-05
1.00E-03
Package Outlines (Dimensions in mm)
SRD 00512Z
Semiconductor Group
4
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