Freescale Semiconductor
Technical Data
Document Number: MRFE6S9200H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1,
64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 35%
Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P
out
= 300 W CW
(3 dB Input Overdrive from Rated P
out
), Designed for Enhanced
Ruggedness.
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9200HR3
MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9200HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9200HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 200 W CW
Case Temperature 79°C, 58 W CW
Symbol
R
θJC
Value
(2,3)
0.29
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRFE6S9200HR3 MRFE6S9200HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 600
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 4.1 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
2.41
74.61
557.27
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.2
2.7
3.8
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 58 W Avg. W - CDMA, f = 880 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Video Bandwidth @ 200 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
out
= 58 W Avg.
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ P
out
= 200 W CW
Average Group Delay @ P
out
= 200 W CW, f = 880 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 200 W CW,
f = 880 MHz, Six Sigma Window
Gain Variation over Temperature ( - 30°C to +85°C)
Output Power Variation over Temperature ( - 30°C to +85°C)
1. Part is internally matched on input.
G
ps
η
D
PAR
ACPR
IRL
VBW
—
10
—
20
33
6
—
—
21
35
6.36
- 40
- 15
23
—
—
- 36.5
-9
dB
%
dB
dBc
dB
MHz
Typical Performances
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 865 - 900 MHz Bandwidth
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.5
0.28
3.72
15.9
0.016
0.008
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRFE6S9200HR3 MRFE6S9200HSR3
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
C30
+
C26
R3
Z11
Z13
C2
R2
Z15
C11
Z16
Z17
+
C4
+
V
SUPPLY
C22 C23 C32 C28 C34
C12
Z18
C14
Z19
C16
Z20
C18
Z21 Z22 Z23
Z24
C6
RF
OUTPUT
Z25
RF
INPUT
C9
Z1
C1
C20
C7
C8
R1
B2
+
C31
C27
R4
C3
Z9
Z10
Z11, Z12
Z13, Z14
Z15
Z16
Z17
Z18
0.119″ x 0.118″ Microstrip
0.305″ x 0.980″ Microstrip
2.134″ x 0.070″ Microstrip
1.885″ x 0.100″ Microstrip
0.100″ x 1.090″ Microstrip
0.212″ x 1.090″ Microstrip
0.083″ x 0.962″ x 1.036″ Taper
0.074″ x 0.816″ x 0.888″ Taper
Z19
Z20
Z21
Z22
Z23
Z24
Z25
PCB
0.074″ x 0.669″ x 0.707″ Taper
0.074″ x 0.524″ x 0.595″ Taper
0.058″ x 0.474″ x 0.488″ Taper
0.326″ x 0.491″ Microstrip
0.708″ x 0.220″ Microstrip
0.555″ x 0.080″ Microstrip
0.356″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22,
0.030″,
ε
r
= 2.55
Z12
C5
+
C25 C24 C33 C29
DUT
Z14
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C10
C13
C15
C17
C19
C21
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.351″
0.538″
0.424″
0.052″
0.414″
0.052″
0.140″
0.244″
x 0.080″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.491″
x 0.491″
x 0.736″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.980″ Taper
Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4, C5, C6
C7
C8, C9, C18, C19
C10, C11
C12, C13
C14, C15, C16, C17
C20
C21
C22, C23, C24, C25
C26, C27
C28, C29
C30, C31, C32, C33
C34
R1, R2, R3, R4
Description
Small Ferrite Beads, Surface Mount
47 pF Chip Capacitors
2.7 pF Chip Capacitor
1.3 pF Chip Capacitors
12 pF Chip Capacitors
4.3 pF Chip Capacitors
3.3 pF Chip Capacitors
0.6 - 4.5 pF Variable Capacitor, Gigatrim
0.8 - 8.0 pF Variable Capacitor, Gigatrim
10
μF,
50 V Chip Capacitors
10
μF,
35 V Tantalum Chip Capacitors
22
μF,
35 V Tantalum Chip Capacitors
0.1
μF
Chip Capacitors
330
μF,
63 V Electrolytic Capacitor
10
Ω,
1/4 W Chip Resistors
Part Number
2743019447
ATC100B470JT500XT
ATC100B2R7JT500XT
ATC100B1R3JT500XT
ATC100B120JT500XT
ATC100B4R3JT500XT
ATC100B3R3JT500XT
27271SL
27291SL
GRM55DR61H106KA88B
T491C106K035AT
T491C226K035AT
CDR33Bx104AKYS
EKMG630ELL331MJ205
CRCW120610R0FKEA
Manufacturer
Fair Rite
ATC
ATC
ATC
ATC
ATC
ATC
Johanson
Johanson
Murata
Kemet
Kemet
Kemet
United Chemi - Con
Vishay
MRFE6S9200HR3 MRFE6S9200HSR3
RF Device Data
Freescale Semiconductor
3
C2
C26
B1
R3
C30
900 MHz
NI−880
Rev. 3
C4
C22
C23
C28
C32
C34
R2
C9
CUT OUT AREA
C8
C1
C20
C7
R1
C11
C16 C18
C12 C14
C13
C15 C17 C19
C10
C33
C21
C6
B2
C31
C24
C25
C29
C27
C3
C5
Figure 2. MRFE6S9200HR3(SR3) Test Circuit Component Layout
MRFE6S9200HR3 MRFE6S9200HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
23
22
21
G
ps
, POWER GAIN (dB)
20
19
18
17
16
15
800
IRL
820
840
860
880
900
920
V
DD
= 28 Vdc, P
out
= 58 W (Avg.)
I
DQ
= 1400 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
η
D
G
ps
38
34
30
26
−0.3
PARC (dBc)
−0.6
−0.9
−1.2
PARC
940
−1.5
960
η
D
, DRAIN
EFFICIENCY (%)
0
−4
−9
−12
−16
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ P
out
= 58 Watts Avg.
22
21
20
G
ps
, POWER GAIN (dB)
19
18
17
16
IRL
15
14
800
PARC
820
840
860
880
900
920
940
−2.8
−3
960
G
ps
V
DD
= 28 Vdc, P
out
= 99 W (Avg.)
I
DQ
= 1400 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
η
D
51
45
39
33
−2.2
PARC (dBc)
−2.4
−2.6
η
D
, DRAIN
EFFICIENCY (%)
−3
−6
−9
−12
−15
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ P
out
= 99 Watts Avg.
23
22
G
ps
, POWER GAIN (dB)
I
DQ
= 2100 mA
1750 mA
1400 mA
1050 mA
V
DD
= 28 Vdc
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
10
100
600
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
0
−10
−20
1400 mA
−30
−40
−50
−60
1
1
10
100
600
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
1750 mA
2100 mA
1050 mA
V
DD
= 28 Vdc
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
I
DQ
= 700 mA
21
20
19
18
17
700 mA
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9200HR3 MRFE6S9200HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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