MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1 is a Preferred Device
Driver Transistors
PNP Silicon
Features
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COLLECTOR
3
Symbol
V
CEO
MMBTA55
MMBTA56
Collector −Base Voltage
MMBTA55
MMBTA56
Emitter −Base Voltage
Collector Current − Continuous
V
EBO
I
C
V
CBO
−60
−80
−4.0
−500
Vdc
mAdc
1
2
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MMBTA55LT1
MMBTA56LT1
SOT−23
CASE 318
STYLE 6
−60
−80
Vdc
Value
Unit
Vdc
1
BASE
2
EMITTER
3
•
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAMS
2H X
2GM X
2H, 2GM = Specific Device Code
X
= Date Code
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBTA55LT1
MMBTA55LT3
MMBTA56LT1
MMBTA56LT1G
MMBTA56LT3
Package
SOT−23
SOT−23
SOT−23
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
March, 2004 − Rev. 3
Publication Order Number:
MMBTA55LT1/D
MMBTA55LT1, MMBTA56LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= −60 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= −60 Vdc, I
E
= 0)
(V
CB
= −80 Vdc, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −100 mAdc, I
B
= −10 mAdc)
Base −Emitter On Voltage
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
f
T
50
−
MHz
h
FE
100
100
V
CE(sat)
V
BE(on)
−
−
−
−
−0.25
−1.2
Vdc
Vdc
−
MMBTA55
MMBTA56
V
(BR)CEO
MMBTA55
MMBTA56
V
(BR)EBO
I
CES
I
CBO
−
−
−0.1
−0.1
−60
−80
−4.0
−
−
−
−
−0.1
Vdc
mAdc
mAdc
Vdc
Symbol
Min
Max
Unit
TURN−ON TIME
V
CC
−1.0 V
+40 V
R
L
OUTPUT
V
in
* C
S
t
6.0 pF
TURN−OFF TIME
V
CC
+V
BB
+40 V
100
R
B
5.0
mF
100
5.0
ms
t
r
= 3.0 ns
* C
S
t
6.0 pF
R
L
OUTPUT
5.0
ms
+10 V
V
in
0
t
r
= 3.0 ns
5.0
mF
100
R
B
100
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
MMBTA55LT1, MMBTA56LT1
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
200
V
CE
= −2.0 V
T
J
= 25°C
C, CAPACITANCE (pF)
100
70
50
30
20
C
ibo
T
J
= 25°C
100
70
50
30
20
−2.0 −3.0
10
7.0
C
obo
−5.0 −7.0 −10
−20 −30
−50 −70 −100
−200
5.0
−0.1 −0.2
−0.5 −1.0
−2.0
−5.0
−10 −20
−50 −100
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
300
t, TIME (ns)
200
100
70
50
30
20
V
CC
= −40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
400
T
J
= 125°C
t
s
h FE, DC CURRENT GAIN
200
25°C
−55°C
V
CE
= −1.0 V
t
f
100
80
60
t
d
@ V
BE(off)
= −0.5 V
−20 −30
−50 −70 −100
t
r
−200 −300
−500
40
−0.5 −1.0 −2.0
−5.0 −10
−20
−50
−100 −200
−500
10
−5.0 −7.0 −10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
Figure 5. DC Current Gain
−1.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
−0.8
V, VOLTAGE (VOLTS)
−0.6
V
BE(on)
@ V
CE
= −1.0 V
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
−0.5
−1.0 −2.0
−5.0
−10
−20
−50
−100 −200
−500
I
C
, COLLECTOR CURRENT (mA)
Figure 6. “ON” Voltages
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3
MMBTA55LT1, MMBTA56LT1
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
−1.0
T
J
= 25°C
−0.8
I
C
=
−50 mA
I
C
=
−100 mA
I
C
=
−250 mA
I
C
=
−500 mA
−0.8
−1.2
−0.6
−1.6
−2.0
R
qVB
for V
BE
−0.4
−0.2
I
C
=
−10 mA
−2.4
−2.8
−0.5 −1.0 −2.0
0
−0.05 −0.1 −0.2
−0.5
−1.0
−2.0
−5.0
−10
−20
−50
−5.0
−10
−20
−50
−100 −200
−500
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base−Emitter Temperature
Coefficient
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4
MMBTA55LT1, MMBTA56LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
L
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
B S
V
G
C
D
H
K
J
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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