AP55T06GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
60V
18mΩ
29A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Rating
60
+20
29
18
120
31.3
1.92
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Value
4
65
Units
℃/W
℃/W
1
201202151
Data and specifications subject to change without notice
AP55T06GI-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=12A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=18A
V
DS
=48V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=18A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=18A
R
G
=1Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
60
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
24
-
-
16
3.5
10.5
9
25
22
6
160
115
1.7
Max. Units
-
18
30
3
-
25
+100
25.6
-
-
-
-
-
-
-
-
3.4
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
1200 1920
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=18A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
30
30
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP55T06GI-HF
120
100
T
C
= 25 C
100
o
10V
7.0V
6.0V
I
D
, Drain Current (A)
T
C
= 150 C
80
o
10V
7.0V
6.0V
I
D
, Drain Current (A)
80
5.0V
60
60
5.0V
40
V
GS
=4.0V
40
V
GS
=4.0V
20
20
0
0
4
8
12
16
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
3.0
I
D
=12A
T
C
=25 C
24
o
2.6
I
D
=18A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
2.2
1.8
20
1.4
1.0
16
0.6
12
2
4
6
8
10
0.2
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I
D
=250uA
16
1.2
12
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
I
S
(A)
0.8
8
0.4
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP55T06GI-HF
10
1600
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=18A
V
DS
=80V
8
1200
C
iss
6
C (pF)
4
2
800
400
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
100
0.2
Operation in this
area limited by
R
DS(ON)
0.1
0.1
I
D
(A)
100us
0.05
10
0.02
1
T
C
=25
o
C
Single Pulse
0.1
1ms
10ms
100ms
1s
DC
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.001
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
32
80
V
DS
=5V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
24
60
16
40
T
j
=150
o
C
20
8
T
j
=25
o
C
T
j
= -40 C
0
25
50
75
100
125
150
0
o
0
2
4
6
8
T
C
, Case Temperature (
o
C)
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Transfer Characteristics
4
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