SFS1826 thru SFS1829
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
•
•
•
•
•
•
Low-Level Gate Characteristics
I
GT
= 200 µA (Max) @ 25
o
C
Low Holding Current I
H
= 1 mA (Max) @ 25
o
C
Anode Common to Case
Hermetically Sealed
TX, TXV, S-Level Screening Available. Consult
Factory
1.6 AMPS
200
─
400 VOLTS
SILICON CONTROLLED
RECTIFIER
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS1826
SFS1827
SFS1828
SFS1829
SFS1826
SFS1827
SFS1828
SFS1829
Symbol
V
DRM
V
RRM
Value
200
250
300
400
300
350
400
500
1.6
1.0
0.7
15
0.1
0.01
0.1
6.0
-65 to +200
-65 to +200
72
Units
Volts
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
RMS On-State Current
(All Conduction Angles)
Average On-State Current
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, T
C
= 80
o
C )
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
V
RSM
Volts
I
T (RMS)
T
C
= 50
o
C
T
A
= 25
o
C
I
T (AV)
I
TSM
P
GM
P
G (AV)
I
GM
V
GM
T
J
Tstg
R
θJC
Amps
Amps
Amps
Watts
Watts
Amps
Volts
o
o
o
C
C
C/W
SFS1826 thru SFS1829
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Peak Reverse Blocking Current
(Rated V
RRM
)
Peak Forward Blocking Current
(Rated V
DRM
, R
GK
= 1K
Ω)
Peak On-State Voltage
(I
F
= 1.6 A Peak)
Gate Trigger Current
(V
D
= 6 V
DC
, R
L
= 100
Ω
, T
C
= 125
o
C)
(V
D
= 6 V
DC
, R
L
= 100
Ω,
T
C
= -65
o
C)
Gate Trigger Voltage
(V
D
= 6 V
DC
, R
L
= 100
Ω
, T
C
= 25
o
C)
(V
D
= 6 V
DC
, R
L
= 100
Ω,
T
C
= -65
o
C)
Holding Current
(V
D
= 6 V
DC
)
(V
D
= 6 V
DC
, T
C
= -65
o
C)
Symbol
I
RRM
I
DRM
V
TM
I
GT
Min
––
––
––
––
––
––
––
––
––
Max
1
1
1.3
200
350
0.7
0.9
0.3
2.0
Unit
µA
µA
Volts
µA
V
GT
Volts
I
H
mA
NOTES:
1/ RGK current is not included in measurement.
2/ Thyristor devices shall not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applies exceeds the rated blocking voltage.
3/ Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode.
4/ Unless Otherwise Specified, All Electrical Characteristics @
T
C
= 25
o
C, R
GK
= 1K
Ω
.
Available Part Numbers:
SFS1826/18; SFS1827/18; SFS1828/18; SFS1829/18
PIN ASSIGNMENT (Standard)
Package
Cathode
Gate
Anode
Pin 2
Pin 3
Pin 1
TO-18 (/18)
*For information on curves, contact the Factory Representative for Engineering Assistance.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SCR005A
DOC
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