Chip Varistor
DESCRIPTION
The LVS series is metal oxide based chip varistor for transient
voltage suppression. They have non-linear voltage-current
behavior, similar to zener diode. Multilayer structured varistor,
however, shows superiority in electrical reliability than zener
diode, since each grain exhibits small p-n junction. In addition,
LVS series shows better electrical properties such as high
clamping voltage and low leakage current.
FEATURES
*Chip
varistor provides high reliability on surface mounting
*Wide
range of working voltage (V
W
= 5.6V˜30V)
*Good
clamping ratio and low leakage current
*Electroplating
of Ni and solder gives higher solderability
*Wide
operating temperature (-55˜125°C )
*Various
capacitance is available
APPLICATIONS
*Protection
from transient voltage noise in all kinds of IC
*Protection
from ESD, EFT and surge in power I/O port
*Replacement
of zener diode
ORDERING INFORMATION
LVS 10 033 B 200 401
Series
LVS = Standard
LVSL = Low
Capacitance
Capacitance
030 = 3pF
300 = 30pF
301 = 300pF
Size
10
16
20
32
=
=
=
=
1005(0402)
1608(0603)
2012(0805)
3216(1206)
Clamping voltage
100 = 10V
300 = 30V
Transient energy
Z
A
B
C
D
E
F
G
H
I
J
K
=
=
=
=
=
=
=
=
=
=
=
=
0.005J
0.02J
0.05J
0.1J
0.2J
0.3J
0.4J
0.6J
0.8J
1.0J
1.3J
1.5J
1
Working voltage
056 = 5.6V
090 = 9.0V
260 = 26V
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Chip Varistor
SPECIFICATIONS
Part No.
Symbol
Working
Voltage
(<25
µA
)
V
W
(V)
Breakdown
Voltage
(@ 1mA )
V
B
(V)
Clamping
Voltage
( 8/20
µS
)
V
C
(V)
Peak
Current
( 8/20
µS
)
I
P
(A)
Transient
Energy
(10/1000
µS
)
E
T
(J)
Capacitance
(@ 1 kHz)
C (pF)
1005(0402) size
Part No.
LVS10056B160...
LVS10090B200...
LVS10140B300...
LVS10180B400...
LVS10260B580...
V
W
(V)
5.6
9
14
18
26
V
B
(V)
7.2˜9.6
10.8˜14.3
16.8˜22.2
21.5˜28.5
30.9˜40.9
V
C
(V)
16
20
30
40
58
I
P
(A)
20
20
20
20
20
E
T
(J)
0.05
0.05
0.05
0.05
0.05
C (pF)
370
200
100
50
30
1608(0603) size
Part No.
LVS16056C160...
LVS16090C200...
LVS16140C300...
LVS16180C400...
LVS16260C580...
LVS16300C650...
V
W
(V)
5.6
9
14
18
26
30
V
B
(V)
7.2˜9.6
10.8˜14.3
16.8˜22.2
21.5˜28.5
30.9˜40.9
35.7˜47.3
V
C
(V)
16
20
30
40
58
65
I
P
(A)
30
30
30
30
30
30
E
T
(J)
0.1
0.1
0.1
0.1
0.1
0.1
C (pF)
1000
650
350
230
180
100
2012(0805) size
Part No.
LVS20056C160...
LVS20090C200...
LVS20140C300...
LVS20180C400...
LVS20260C580...
LVS20300C650...
V
W
(V)
5.6
9
14
18
26
30
V
B
(V)
7.2˜9.6
10.8˜14.3
16.8˜22.2
21.5˜28.5
30.9˜40.9
35.7˜47.3
V
C
(V)
16
20
30
40
58
65
I
P
(A)
40
40
35
35
35
35
E
T
(J)
0.1
0.1
0.1
0.1
0.1
0.1
C (pF)
3000
1300
800
450
300
200
3216(1206) size
Part No.
LVS32056C160...
LVS32090C200...
LVS32140C300...
LVS32180C400...
LVS32260C580...
LVS32300C650...
*
LVS32180F400...
V
W
(V)
5.6
9
14
18
26
30
18
V
B
(V)
7.2˜9.6
10.8˜14.3
16.8˜22.2
21.5˜28.5
30.9˜40.9
35.7˜47.3
21.5˜28.5
V
C
(V)
16
20
30
40
58
65
40
I
P
(A)
40
40
35
35
35
35
150
E
T
(J)
0.1
0.1
0.1
0.1
0.1
0.1
0.4
C (pF)
1800
1300
800
450
300
200
1500
* For Automotive Application : Withstand 24.5V DC for 5minutes
Low Capacitance Series
Part No.
LVS10090C200...
LVS10140C300...
LVS10180C400...
LVS10260C580...
LVS10300C650...
Working Voltage
9
14
18
26
30
Breakdown Voltage
10.8˜14.3
16.8˜22.2
21.5˜28.5
30.9˜40.9
35.7˜47.3
Clamping Voltage
20
30
40
58
65
Peak Current
40
35
35
35
35
Transient Energy
0.1
0.1
0.1
0.1
0.1
Capacitance
1300
800
450
300
200
* 1MHz
V
W
= Maximum DC voltage, that is applied continuously in the maximum operating temperature of the device.
V
B
= Varistor voltage or normal voltage, that is measured at the applied current of 1mA.
V
C
= Peak voltage appearing across the varistor when measured at the condition of specified pulsed current and waveform.
(8/20µS, 0.1J 2A, 0.05J 1A)
I
P
= Surge current or peak current, the maximum current without causing device failure measured with specified waveform.( 8/20µS)
E
T
= Maximum rated transient energy that is dissipated for a single current pulse at a specified impulse duration.( 10/1000µS)
2
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Chip Varistor
RELIABILITY TEST METHOD
Item
Resistance to Soldering
Heat
Solderability Test
Test Method
Soldering temperature : 260± 5°C
Duration of immersion : 10 ± 1sec.
Preheating : 150°C , 1min.
Soldering temperature : 230 ± 5°C
Duration of immersion : 5± 1sec.
Preheating : 150°C , 1min.
The Force W is applied to DUT.
Criteria for judging
Visual : No mechanical damage
∆
V
B
/V
B
<10%
At least 75% of the electrode must
be covered with new solder.
Visual : No mechanical damage
0805 : over 2.0Kgf
0603 : over 1.0Kgf
0402 : over 0.7Kgf
Adhesion
Resistance to
Flexure of Substrate
The middle part of substrate shall,
successively, be pressurized by means of the
pressurizing rod at a rate of about 1
mm
/sec.
Maintenance time : 5 sec.
Bending distane : 1
mm
Visual : No mechanical damage
Dry Heat Test
Test temperature : 125 ± 2°C
Test duration : 1000+48hrs.
After completion of the test, leaving the
sample under the standard conditions for 24¡ 2hrs.
Visual : No mechanical damage
∆
V
B
/V
B
<10%
Cold Test
Test temperature : -30± 2°C
Test duration : 1000+48hrs.
After completion of the test, leaving the
sample under the standard conditions for 24+ 2hrs.
Visual : No mechanical damage
∆
V
B
/V
B
<10%
Damp Heat Test
(Steady State)
Test temperature : 40± 2°C
Test relative humidity : 90˜95RH%
Test duration : 56days+24hrs.
After completion of the test, leaving the sample under
the standard conditions for 24± 2hrs.(IEC60068-2-3)
Visual : No mechanical damage
∆
V /V
B
<10%
B
Thermal Shock
Test
Visual : No mechanical damage
∆
V
B
/V
B
<10%
This cycle is repeated 50 times. After completion of the
test, leave the sample under standard condition for 24±
2hrs.
ESD Test
(Contact discharge)
Test Voltage : 8 kV
Type of discharge : direct contact discharge
Number of test pulses : 20 times
Polarity : +/-
(IEC 61000-4-2)
ESD Test
(Air Discharge)
Test Voltage : 15 kV
Type of discharge : air discharge
Number of test pulses : 20 times
Polarity : +/-
(IEC 61000-4-2)
High Temperature
Life Test
Temp. : 125± 2°C
Duration : 1000¡ 48hrs.
Applied voltage : V
dc max
After completion of the test, leave the sample under
standard condition for 24± 2hrs.
Visual : No mechanical damage
∆
V
B
/V
B
<10%
Visual : No mechanical damage
∆
V
B
/V
B
<15%
Visual : No mechanical damage
∆
V
B
/V
B
<15%
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3
Microchip MCU
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