3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.3 A, 500 V, 3 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA
| 参数名称 | 属性值 |
| 最小击穿电压 | 500 V |
| 端子数量 | 2 |
| 加工封装描述 | ROHS COMPLIANT, DPAK-3 |
| each_compli | Yes |
| 欧盟RoHS规范 | Yes |
| 状态 | Active |
| 额定雪崩能量 | 140 mJ |
| 壳体连接 | DRAIN |
| 结构 | SINGLE WITH BUILT-IN DIODE |
| drain_current_max__abs___id_ | 3.3 A |
| 最大漏电流 | 3.3 A |
| 最大漏极导通电阻 | 3 ohm |
| 场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR |
| jedec_95_code | TO-252AA |
| jesd_30_code | R-PSSO-G2 |
| jesd_609_code | e3 |
| moisture_sensitivity_level | 1 |
| 元件数量 | 1 |
| 操作模式 | ENHANCEMENT MODE |
| 最大工作温度 | 150 Cel |
| 包装材料 | PLASTIC/EPOXY |
| 包装形状 | RECTANGULAR |
| 包装尺寸 | SMALL OUTLINE |
| eak_reflow_temperature__cel_ | 260 |
| larity_channel_type | N-CHANNEL |
| wer_dissipation_max__abs_ | 83 W |
| 最大漏电流脉冲 | 10 A |
| qualification_status | COMMERCIAL |
| sub_category | FET General Purpose Power |
| 表面贴装 | YES |
| 端子涂层 | MATTE TIN |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| ime_peak_reflow_temperature_max__s_ | 30 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| IRFU420APbF | IRFR420ATRPbF | IRFR420ATRR | SIHFR420AT-E3 | SIHFU420A | |
|---|---|---|---|---|---|
| 描述 | 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 最小击穿电压 | 500 V | 500 V | 500 V | 500 V | 500 V |
| 端子数量 | 2 | 2 | 2 | 2 | 2 |
| 加工封装描述 | ROHS COMPLIANT, DPAK-3 | ROHS COMPLIANT, DPAK-3 | ROHS COMPLIANT, DPAK-3 | ROHS COMPLIANT, DPAK-3 | ROHS COMPLIANT, DPAK-3 |
| each_compli | Yes | Yes | Yes | Yes | Yes |
| 欧盟RoHS规范 | Yes | Yes | Yes | Yes | Yes |
| 状态 | Active | Active | Active | Active | Active |
| 额定雪崩能量 | 140 mJ | 140 mJ | 140 mJ | 140 mJ | 140 mJ |
| 壳体连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 结构 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| drain_current_max__abs___id_ | 3.3 A | 3.3 A | 3.3 A | 3.3 A | 3.3 A |
| 最大漏电流 | 3.3 A | 3.3 A | 3.3 A | 3.3 A | 3.3 A |
| 最大漏极导通电阻 | 3 ohm | 3 ohm | 3 ohm | 3 ohm | 3 ohm |
| 场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| jedec_95_code | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
| jesd_30_code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| jesd_609_code | e3 | e3 | e3 | e3 | e3 |
| moisture_sensitivity_level | 1 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 操作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最大工作温度 | 150 Cel | 150 Cel | 150 Cel | 150 Cel | 150 Cel |
| 包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 包装尺寸 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| eak_reflow_temperature__cel_ | 260 | 260 | 260 | 260 | 260 |
| larity_channel_type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| wer_dissipation_max__abs_ | 83 W | 83 W | 83 W | 83 W | 83 W |
| 最大漏电流脉冲 | 10 A | 10 A | 10 A | 10 A | 10 A |
| qualification_status | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| sub_category | FET General Purpose Power | FET General Purpose Power | FET General Purpose Power | FET General Purpose Power | FET General Purpose Power |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子涂层 | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| ime_peak_reflow_temperature_max__s_ | 30 | 30 | 30 | 30 | 30 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
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