SSPL5505
55V N-Channel MOSFET
Main Product Characteristics
V
DSS
R
DS
(on)
I
D
55V
4.5mohm(typ.)
160A
①
TO -220
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
②
Power Dissipation
③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
160
①
110
①
640
230
1.5
55
± 20
960
80
-55 to +175
W
W/°C
V
V
mJ
A
°C
A
Units
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Page 1 of 7
Rev.1.1
SSPL5505
55V N-Channel MOSFET
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristics
Junction-to-case
③
Junction-to-ambient (t ≤ 10s)
④
Junction-to-Ambient (PCB mounted, steady-state)
④
Typ.
—
—
—
Max.
0.65
62
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics
@T
A
=25℃
Symbol
V
(BR)DSS
R
DS(on)
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Min.
55
—
—
2
—
—
—
—
unless otherwise specified
Typ.
—
4.5
7.74
—
2.0
—
—
—
—
101.6
25.8
40.1
19.4
88.2
45.1
74.2
7128
837
110
Max.
—
5
—
4
—
1
50
100
—
—
—
—
—
—
—
—
—
—
—
pF
nS
nC
Units
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
=10V,I
D
=75A
T
J
= 125℃
V
V
DS
= V
GS
, I
D
= 150μA
T
J
= 125℃
μA
V
DS
=55V,V
GS
= 0V
T
J
= 125℃
nA
V
GS
=20V
V
GS
= -20V
I
D
= 75A,
V
DS
=30V,
V
GS
= 10V
V
GS
=10V, V
DD
=30V,
R
L
=0.4Ω,
R
GEN
=2.7Ω
I
D
=75A
V
GS
= 0V
V
DS
=50V
ƒ = 1MHz
V
GS(th)
Gate threshold voltage
I
DSS
Drain-to-Source leakage current
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
-100
—
—
—
—
—
—
—
—
—
—
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
160
①
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=75A, V
GS
=0V, T
J
= 25°C
T
J
= 25°C, I
F
=75A, di/dt =
100A/μs
I
SM
V
SD
t
rr
Q
rr
—
—
—
—
—
0.87
49.5
93.8
640
1.3
—
—
A
V
nS
nC
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Page 2 of 7
Rev.1.1
SSPL5505
55V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated
continuous current based on maximum allowable junction temperature. Package
limitation current is 75A
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These
curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of T
J(MAX)
=175°C.
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Page 3 of 7
Rev.1.1
SSPL5505
55V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.1
SSPL5505
55V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.1
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