EEPROM, 2KX4, 90ns, Parallel, CMOS, CDIP18, CERAMIC, DIP-18
| 参数名称 | 属性值 |
| 厂商名称 | Fairchild |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 18 |
| Reach Compliance Code | unknow |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 90 ns |
| JESD-30 代码 | R-CDIP-T18 |
| 长度 | 23.9 mm |
| 内存密度 | 8192 bi |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端子数量 | 18 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 2KX4 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 编程电压 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| 29653DMB | 29623DM | 29623DM/883B | 29611DC | 29623DC | 29661DC | |
|---|---|---|---|---|---|---|
| 描述 | EEPROM, 2KX4, 90ns, Parallel, CMOS, CDIP18, CERAMIC, DIP-18 | EEPROM, 512X8, 85ns, Parallel, CMOS, CDIP20, CERAMIC, DIP-20 | EEPROM, 512X8, 85ns, Parallel, CMOS, CDIP20, CERAMIC, DIP-20 | EEPROM, 512X4, 55ns, Parallel, CMOS, CDIP16, CERAMIC, DIP-16 | EEPROM, 512X8, 70ns, Parallel, CMOS, CDIP20, CERAMIC, DIP-20 | EEPROM, 256X4, 55ns, Parallel, CMOS, CDIP16, CERAMIC, DIP-16 |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
| 针数 | 18 | 20 | 20 | 16 | 20 | 16 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 90 ns | 85 ns | 85 ns | 55 ns | 70 ns | 55 ns |
| JESD-30 代码 | R-CDIP-T18 | R-CDIP-T20 | R-CDIP-T20 | R-CDIP-T16 | R-CDIP-T20 | R-CDIP-T16 |
| 内存密度 | 8192 bi | 4096 bi | 4096 bi | 2048 bi | 4096 bi | 1024 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 4 | 8 | 8 | 4 | 8 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 20 | 20 | 16 | 20 | 16 |
| 字数 | 2048 words | 512 words | 512 words | 512 words | 512 words | 256 words |
| 字数代码 | 2000 | 512 | 512 | 512 | 512 | 256 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 75 °C | 75 °C | 70 °C |
| 组织 | 2KX4 | 512X8 | 512X8 | 512X4 | 512X8 | 256X4 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 编程电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.25 V | 5.25 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.75 V | 4.75 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | COMMERCIAL EXTENDED | COMMERCIAL EXTENDED | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| 长度 | 23.9 mm | 24.2 mm | 24.2 mm | - | 24.2 mm | - |
| Base Number Matches | - | 1 | 1 | 1 | 1 | 1 |
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