N-CHANNEL 75V - 0.0065
Ω
-120A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
STB140NF75
STP140NF75
STB140NF75-1
s
s
STB140NF75 STP140NF75
STB140NF75-1
V
DSS
75 V
75 V
75 V
R
DS(on)
<0.0075
Ω
<0.0075
Ω
<0.0075
Ω
I
D
120 A
(**)
120 A
(**)
120 A
(**)
3
1
3
12
TYPICAL R
DS
(on) = 0.0065
Ω
SURFACE-MOUNTING D
²
PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE 42V BATTERY DRIVERS
D
2
PAK
TO-263
(Suffix “T4”)
3
1
2
I
2
PAK
TO-262
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB140NF75T4
STP140NF75
STB140NF75-1
MARKING
B140NF75
P140NF75
B140NF75
PACKAGE
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
I
D
(**)
Drain Current (continuous) at T
C
= 100°C
I
D
I
DM
(•)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
(2)
E
AS
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(•)
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
75
75
± 20
120
100
480
310
2.08
10
750
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(1) I
SD
≤120A,
di/dt
≤400A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 30V
December 2002
1/14
STB140NF75 STP140NF75 STB150NF75-1
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-pcb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose
(for 10 sec. 1.6 mm from case)
Max
Max
Max
0.48
62.5
see curve on page 6
300
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA
V
GS
= 0
Min.
75
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 20 V
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 70 A
Min.
2
0.0065
Typ.
Max.
4
0.0075
Unit
V
Ω
DYNAMIC
Symbol
g
fs (*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS =
15 V
I
D
= 70 A
Min.
Typ.
160
5000
960
310
Max.
Unit
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/14
STB140NF75 STP140NF75 STB150NF75-1
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
I
D
= 70 A
V
DD
= 38 V
R
G
= 4.7
Ω
V
GS
= 10 V
(Resistive Load, Figure 3)
V
DD
=60 V I
D
=120A V
GS
= 10V
Min.
Typ.
30
140
160
28
70
Max.
Unit
ns
ns
218
(see test circuit, Figure 4)
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
I
D
= 70 A
V
DD
= 38 V
R
G
= 4.7Ω,
V
GS
= 10 V
(Resistive Load, Figure 3)
Min.
Typ.
130
90
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SDM (
•
)
V
SD (*)
t
rr
Q
rr
I
RRM
I
SD
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A
V
GS
= 0
115
450
8
Test Conditions
Min.
Typ.
Max.
120
480
1.5
Unit
A
A
V
ns
nC
A
di/dt = 100A/µs
I
SD
= 120 A
V
DD
= 35 V
T
j
= 150°C
(see test circuit, Figure 5)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/14
STB140NF75 STP140NF75 STB150NF75-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/14
STB140NF75 STP140NF75 STB150NF75-1
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
Power Derating vs Tc
.
Max Id Current vs Tc
.
.
5/14
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