®
STB16NB25
N - CHANNEL 250V - 0.220Ω - 16A - TO-263
PowerMESH™ MOSFET
TYPE
ST B16NB25
s
s
s
s
s
s
V
DSS
250 V
R
DS(on)
< 0.28
Ω
I
D
16 A
s
TYPICAL R
DS(on)
= 0.220
Ω
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
EXTREMELY HIGH dv/dt CAPABILITY
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
Ω
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
o
D
2
PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
250
250
±
30
16
10
64
140
1.12
5.5
-65 to 150
150
(
1
) I
SD
≤
16A, di/dt
≤
200 A/
µ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Unit
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(
•
) Pulse width limited by safe operating area
March 1999
1/8
STB16NB25
THERMAL DATA
R
thj -case
Rthj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
0.9
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
16
250
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µ
A
V
GS
= 0
Min.
250
1
10
±
100
Typ.
Max.
Unit
V
µ
A
µA
nA
V
DS
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS(th)
R
DS(on)
I
D(o n)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
Test Con ditions
I
D
= 250
µA
I
D
= 8 A
16
Min.
3
Typ.
4
0.22
Max.
5
0.28
Unit
V
Ω
A
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(
∗
)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
=8 A
V
GS
= 0
Min.
Typ.
4
1000
250
40
Max.
Unit
S
pF
pF
pF
2/8
STB16NB25
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay T ime
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 125 V
I
D
= 8 A
R
G
= 4.7
Ω
V
GS
= 10 V
(Resistive Load, see fig. 3)
V
DD
= 200 V I
D
= 16 A V
GS
= 10 V
Min.
Typ.
12
12
29
9
11
38
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
d(of f)
t
f
t
r (Voff)
t
f
t
c
Parameter
Turn-off Delay T ime
Fall T ime
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V
DD
= 125 V
I
D
= 8 A
V
GS
= 10 V
R
G
= 4.7
Ω
(Resistive Load, see fig. 3)
V
CLAMP
= 200 V
I
D
= 16 A
V
GS
= 10 V
R
G
= 4.7
Ω
(Induct ive Load, see fig. 5)
Min.
Typ.
35
8
10
9
20
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(
•
)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 16 A
V
GS
= 0
210
1.5
14
I
SD
= 16 A
di/dt = 100 A/
µ
s
T
j
= 150
o
C
V
DD
= 50 V
(see test circuit, fig. 5)
Test Con ditions
Min.
Typ.
Max.
16
64
1.5
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
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