®
STB19NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
ST B19NB20
s
s
s
s
s
s
V
DSS
200 V
R
DS(on)
< 0.180
Ω
I
D
19 A
TYPICAL R
DS(on)
= 0.150
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performance. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
•
)
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
o
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junct ion T emperature
D
2
PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
200
200
±
30
19
12
76
125
1
5.5
-65 to 150
150
(
1
) I
SD
≤
19A, di/dt
≤
300 A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Unit
V
V
V
A
A
A
W
W /
o
C
V/ns
o
C
o
C
(•) Pulse width limited by safe operating area
June 1998
1/8
STB19NB20
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
1
62.5
0.5
300
o
o
o
C/W
C/W
C/W
o
C
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
19
580
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µA
V
GS
= 0
Min.
200
1
10
±
100
Typ.
Max.
Unit
V
µ
A
µA
nA
V
DS
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS(th)
R
DS(on)
I
D(o n)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
Test Con ditions
I
D
= 250
µA
I
D
= 9.5 A
19
Min.
3
Typ.
4
0.150
Max.
5
0.180
Unit
V
Ω
A
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(
∗
)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
=9.5 A
V
GS
= 0
Min.
3
1000
285
45
1350
385
60
Typ.
Max.
Unit
S
pF
pF
pF
2/8
STB19NB20
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Time
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 100 V I
D
= 9.5 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see test circuit, figure 3)
V
DD
= 160 V
I
D
= 19 A V
GS
= 10 V
Min.
Typ.
15
15
29
9.5
13
Max.
20
20
40
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
r (Voff)
t
f
t
c
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V
DD
= 160 V I
D
= 19 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see test circuit, figure 5)
Min.
Typ.
10
10
20
Max.
15
15
30
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(
∗
)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
=19 A
V
GS
= 0
210
1.5
14.5
I
SD
=19 A di/dt = 100 A/
µ
s
o
T
j
= 150 C
V
DD
= 50 V
(see test circuit, figure 5)
Test Con ditions
Min.
Typ.
Max.
19
76
1.5
Unit
A
A
V
ns
µ
C
A
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
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