STB3NA60-1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
ST B3NA60-1
s
s
s
s
s
s
s
V
DSS
600 V
R
DS(on)
<4
Ω
I
D
2.9 A
TYPICAL R
DS(on)
= 0.7
Ω
AVALANCHE RUGGED TECHNOLOGY
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
I2PAK
TO-262
3
12
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
t ot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
St orage Temperature
Max. Operating Junction Temperature
o
Value
600
600
±
30
2.9
1.8
11.6
80
0.64
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
March 1996
1/9
STB3NA60-1
THERMAL DATA
R
t hj-ca se
R
t hj- amb
R
t hj- amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
1.56
62.5
0.5
300
o
o
C/W
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
I
AR
E
AS
E
AR
I
AR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
o
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
o
(T
c
= 100 C, pulse width limited by T
j
max,
δ
< 1%)
Max Valu e
2.9
42
1.6
1.8
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I
D
= 250
µA
V
GS
= 0
Min.
600
250
1000
±100
Typ .
Max.
Un it
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating x 0.8 T
c
= 125
o
C
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
ON (∗)
Symb ol
V
GS(th)
R
DS( on)
I
D(o n)
Parameter
Gate T hreshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10 V
V
GS
= 10 V
Test Cond ition s
I
D
= 250
µA
I
D
= 1.5 A
I
D
= 1.5 A T
C
= 100
o
C
2.9
Min.
2.25
Typ .
3
3.3
Max.
3.75
4
8
Un it
V
Ω
A
V
DS
> I
D(on)
x R
DS(on) max
V
GS
= 10 V
DYNAMIC
Symb ol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Cond ition s
V
DS
> I
D(on)
x R
DS(on) max
V
DS
= 25 V
f = 1 MHz
I
D
= 1.5 A
V
GS
= 0
Min.
1
Typ .
2
380
57
17
500
75
23
Max.
Un it
S
pF
pF
pF
2/9
STB3NA60-1
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symb ol
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on T ime
Rise Time
Turn-on Current Slope
Test Cond ition s
V
DD
= 300 V
I
D
= 1.5 A
V
GS
= 10 V
R
G
= 18
Ω
(see test circuit, figure 3)
V
DD
= 400 V
I
D
= 3 A
R
G
= 18
Ω
V
GS
= 10 V
(see test circuit, figure 5)
I
D
= 3 A
V
DD
= Max Rating x 0.8
V
GS
= 10 V
Min.
Typ .
14
25
300
Max.
20
35
Un it
ns
ns
A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
22
6
9
30
nC
nC
nC
SWITCHING OFF
Symb ol
t
r(Vof f)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall T ime
Cross-over T ime
Test Cond ition s
V
DD
= 480 V
I
D
= 3 A
V
GS
= 10 V
R
G
= 18
Ω
(see test circuit, figure 5)
Min.
Typ .
13
24
12
Max.
18
34
17
Un it
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward O n Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2.9 A
V
GS
= 0
460
5.6
24
I
SD
= 3 A
di/dt = 100 A/µs
o
T
j
= 150 C
V
DD
= 100 V
(see test circuit, figure 5)
Test Cond ition s
Min.
Typ .
Max.
2.9
11.6
1.5
Un it
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
STB3NA60-1
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/9
STB3NA60-1
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
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