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IDT71V67803S133PFG8: 产品描述Cache SRAM, 512KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100; 产品类别存储存储; 文件大小984KB，共23页; 制造商IDT (Integrated Device Technology); 标准

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IDT71V67803S133PFG8概述

Cache SRAM, 512KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

IDT71V67803S133PFG8规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QFP
包装说明	LQFP, QFP100,.63X.87
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
Date Of Intro	1997-09-16
最长访问时间	4.2 ns
其他特性	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G100
JESD-609代码	e3
长度	20 mm
内存密度	9437184 bit
内存集成电路类型	CACHE SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端子数量	100
字数	524288 words
字数代码	512000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	512KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装等效代码	QFP100,.63X.87
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.05 A
最小待机电流	3.14 V
最大压摆率	0.26 mA
最大供电电压 (Vsup)	3.465 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Matte Tin (Sn) - annealed
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm

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256K X 36, 512K X 18

3.3V Synchronous SRAMs

3.3V I/O, Burst Counter

Pipelined Outputs, Single Cycle Deselect

IDT71V67603

IDT71V67803

Features

256K x 36, 512K x 18 memory configurations

Supports high system speed:

– 166MHz 3.5ns clock access time

– 150MHz 3.8ns clock access time

– 133MHz 4.2ns clock access time

LBO

input selects interleaved or linear burst mode

Self-timed write cycle with global write control (GW byte

GW),

write enable (BWE and byte writes (BW

BWE),

BWx)

BWE

3.3V core power supply

Power down controlled by ZZ input

3.3V I/O supply (V

DDQ

)

Packaged in a JEDEC Standard 100-pin thin plastic quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array (fBGA).

Description

The IDT71V67603/7803 are high-speed SRAMs organized as

256K x 36/512K x 18. The IDT71V67603/7803 SRAMs contain write,

data, address and control registers. Internal logic allows the SRAM to

generate a self-timed write based upon a decision which can be left until

the end of the write cycle.

The burst mode feature offers the highest level of performance to the

system designer, as the IDT71V67603/7803 can provide four cycles of

data for a single address presented to the SRAM. An internal burst address

counter accepts the first cycle address from the processor, initiating the

access sequence. The first cycle of output data will be pipelined for one

cycle before it is available on the next rising clock edge. If burst mode

operation is selected (ADV=LOW), the subsequent three cycles of output

data will be available to the user on the next three rising clock edges. The

order of these three addresses are defined by the internal burst counter

and the

LBO

input pin.

The IDT71V67603/7803 SRAMs utilize IDT’s latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-

pin thin plastic quad flatpack (TQFP), a 119 ball grid array (BGA) and a 165

fine pitch ball grid array (fBGA).

Pin Description Summary

-A

BWE

(1)

CLK

ADV

ADSC

ADSP

LBO

I/O

-I/O

, I/O

-I/O

, V

DDQ

Address Inputs

Chip Enable

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

N/A

5310 tbl 01

NOTE:

and

are not applicable for the IDT71V67802.

SEPTEMBER 2004

DSC-5310/06

IDT71V67803S133PFG8相似产品对比

	IDT71V67803S133PFG8	IDT71V67803S133PFGI8	IDT71V67603S150BG8	IDT71V67803S166BG8	IDT71V67803S150BG8	IDT71V67803S133BG8	IDT71V67603S133BGI8	IDT71V67603S133PFG8	IDT71V67603S150BGI8	IDT71V67603S133BG8
描述	Cache SRAM, 512KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 512KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	Cache SRAM, 512KX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	Cache SRAM, 512KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	Cache SRAM, 512KX18, 4.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	Cache SRAM, 256KX36, 4.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	Cache SRAM, 256KX36, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	Cache SRAM, 256KX36, 4.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
是否无铅	不含铅	不含铅	含铅	含铅	含铅	含铅	含铅	不含铅	含铅	含铅
是否Rohs认证	符合	符合	不符合	不符合	不符合	不符合	不符合	符合	不符合	不符合
零件包装代码	QFP	QFP	BGA	BGA	BGA	BGA	BGA	QFP	BGA	BGA
包装说明	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	LQFP, QFP100,.63X.87	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50
针数	100	100	119	119	119	119	119	100	119	119
Reach Compliance Code	compliant	compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	4.2 ns	4.2 ns	3.8 ns	3.5 ns	3.8 ns	4.2 ns	4.2 ns	4.2 ns	3.8 ns	4.2 ns
其他特性	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	133 MHz	133 MHz	150 MHz	166 MHz	150 MHz	133 MHz	133 MHz	133 MHz	150 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119
JESD-609代码	e3	e3	e0	e0	e0	e0	e0	e3	e0	e0
长度	20 mm	20 mm	22 mm	22 mm	22 mm	22 mm	22 mm	20 mm	22 mm	22 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	18	18	36	18	18	18	36	36	36	36
湿度敏感等级	3	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	100	100	119	119	119	119	119	100	119	119
字数	524288 words	524288 words	262144 words	524288 words	524288 words	524288 words	262144 words	262144 words	262144 words	262144 words
字数代码	512000	512000	256000	512000	512000	512000	256000	256000	256000	256000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C
组织	512KX18	512KX18	256KX36	512KX18	512KX18	512KX18	256KX36	256KX36	256KX36	256KX36
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	BGA	BGA	BGA	BGA	BGA	LQFP	BGA	BGA
封装等效代码	QFP100,.63X.87	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	225	225	225	225	225	260	225	225
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	2.36 mm	2.36 mm	2.36 mm	2.36 mm	2.36 mm	1.6 mm	2.36 mm	2.36 mm
最大待机电流	0.05 A	0.07 A	0.05 A	0.05 A	0.05 A	0.05 A	0.07 A	0.05 A	0.07 A	0.05 A
最小待机电流	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
最大压摆率	0.26 mA	0.28 mA	0.305 mA	0.34 mA	0.305 mA	0.26 mA	0.28 mA	0.26 mA	0.325 mA	0.26 mA
最大供电电压 (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Matte Tin (Sn) - annealed	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
端子形式	GULL WING	GULL WING	BALL	BALL	BALL	BALL	BALL	GULL WING	BALL	BALL
端子节距	0.65 mm	0.65 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	0.65 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	30	30	20	20	20	20	20	30	20	20
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Base Number Matches	-	1	1	1	1	1	1	1	-	-

IDT71V67803S133PFG8

IDT71V67803S133PFG8概述

IDT71V67803S133PFG8规格参数

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IDT71V67803S133PFG8相似产品对比

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