Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Linear ( ADI ) |
零件包装代码 | TO-72 |
包装说明 | CYLINDRICAL, O-MBCY-W4 |
针数 | 4 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 25 V |
最大漏极电流 (ID) | 0.2 A |
最大漏源导通电阻 | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 5 pF |
JEDEC-95代码 | TO-72 |
JESD-30 代码 | O-MBCY-W4 |
元件数量 | 1 |
端子数量 | 4 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 125 °C |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | WIRE |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
SST823-TO-72 | SST823-SOT-143 | SST824-TO-72 | SST824-SOT-143 | SST823DE | |
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描述 | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4 | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4 | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Transistor, |
包装说明 | CYLINDRICAL, O-MBCY-W4 | SMALL OUTLINE, R-PDSO-G4 | CYLINDRICAL, O-MBCY-W4 | SMALL OUTLINE, R-PDSO-G4 | , |
Reach Compliance Code | compli | compliant | compliant | compliant | compliant |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | - |
厂商名称 | Linear ( ADI ) | - | Linear ( ADI ) | Linear ( ADI ) | Linear ( ADI ) |
针数 | 4 | 4 | 4 | 4 | - |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
最小漏源击穿电压 | 25 V | 25 V | 25 V | 25 V | - |
最大漏极电流 (ID) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | - |
最大漏源导通电阻 | 5 Ω | 5 Ω | 5 Ω | 5 Ω | - |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
最大反馈电容 (Crss) | 5 pF | 5 pF | 5 pF | 5 pF | - |
JESD-30 代码 | O-MBCY-W4 | R-PDSO-G4 | O-MBCY-W4 | R-PDSO-G4 | - |
元件数量 | 1 | 1 | 1 | 1 | - |
端子数量 | 4 | 4 | 4 | 4 | - |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | - |
封装主体材料 | METAL | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | - |
封装形状 | ROUND | RECTANGULAR | ROUND | RECTANGULAR | - |
封装形式 | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE | - |
峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 | - |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
表面贴装 | NO | YES | NO | YES | - |
端子形式 | WIRE | GULL WING | WIRE | GULL WING | - |
端子位置 | BOTTOM | DUAL | BOTTOM | DUAL | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 40 | NOT SPECIFIED | 40 | - |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | - |
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