Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Linear ( ADI ) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 |
| 针数 | 4 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 25 V |
| 最大漏极电流 (ID) | 0.2 A |
| 最大漏源导通电阻 | 5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 5 pF |
| JESD-30 代码 | R-PDSO-G4 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 125 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| SST824-SOT-143 | SST823-SOT-143 | SST824-TO-72 | SST823DE | SST823-TO-72 | |
|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4 | Transistor, | Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | CYLINDRICAL, O-MBCY-W4 | , | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compli |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | - | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | - | 符合 |
| 厂商名称 | Linear ( ADI ) | - | Linear ( ADI ) | Linear ( ADI ) | Linear ( ADI ) |
| 针数 | 4 | 4 | 4 | - | 4 |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 25 V | 25 V | 25 V | - | 25 V |
| 最大漏极电流 (ID) | 0.2 A | 0.2 A | 0.2 A | - | 0.2 A |
| 最大漏源导通电阻 | 5 Ω | 5 Ω | 5 Ω | - | 5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 5 pF | 5 pF | 5 pF | - | 5 pF |
| JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | O-MBCY-W4 | - | O-MBCY-W4 |
| 元件数量 | 1 | 1 | 1 | - | 1 |
| 端子数量 | 4 | 4 | 4 | - | 4 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | - | 125 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL | - | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | ROUND | - | ROUND |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL | - | CYLINDRICAL |
| 峰值回流温度（摄氏度） | 260 | 260 | NOT SPECIFIED | - | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| 表面贴装 | YES | YES | NO | - | NO |
| 端子形式 | GULL WING | GULL WING | WIRE | - | WIRE |
| 端子位置 | DUAL | DUAL | BOTTOM | - | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 | 40 | NOT SPECIFIED | - | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | SILICON |
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