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Datasheet

Datasheet> 器件分类 > 分立半导体> 晶体管> HGT1S3N60B3S

HGT1S3N60B3S: 产品描述Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4; 产品类别分立半导体晶体管; 文件大小321KB，共12页; 制造商Harris; 官网地址http://www.harris.com/

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HGT1S3N60B3S概述

Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4

HGT1S3N60B3S规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Harris
包装说明	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
外壳连接	COLLECTOR
最大集电极电流 (IC)	7 A
集电极-发射极最大电压	600 V
配置	SINGLE
门极发射器阈值电压最大值	6 V
门极-发射极最大电压	20 V
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	33 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
晶体管应用	MOTOR CONTROL
晶体管元件材料	SILICON
标称断开时间 (toff)	220 ns
标称接通时间 (ton)	16 ns

HGT1S3N60B3S相似产品对比

	HGT1S3N60B3S	HGTP3N60B3	HGT1S3N60B3S9A	HGTD3N60B3S9A	HGT1S3N60B3
描述	Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4	Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC PACKAGE-3	Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4	Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC PACKAGE-4	Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3
厂商名称	Harris	Harris	Harris	Harris	Harris
包装说明	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	unknown	unknown	unknown	unknow
其他特性	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING	LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	7 A	7 A	7 A	7 A	7 A
集电极-发射极最大电压	600 V	600 V	600 V	600 V	600 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
JEDEC-95代码	TO-263AB	TO-220AB	TO-263AB	TO-252AA	TO-262AA
JESD-30 代码	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
元件数量	1	1	1	1	1
端子数量	2	3	2	2	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	YES	YES	NO
端子形式	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称断开时间 (toff)	220 ns	220 ns	220 ns	220 ns	220 ns
标称接通时间 (ton)	16 ns	16 ns	16 ns	16 ns	16 ns
是否Rohs认证	不符合	不符合	-	-	不符合
门极发射器阈值电压最大值	6 V	6 V	-	-	6 V
门极-发射极最大电压	20 V	20 V	-	-	20 V
JESD-609代码	e0	e0	-	-	e0
最高工作温度	150 °C	150 °C	-	-	150 °C
最大功率耗散 (Abs)	33 W	33 W	-	-	33 W
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)

HGT1S3N60B3S

HGT1S3N60B3S概述

HGT1S3N60B3S规格参数

HGT1S3N60B3S相似产品对比

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