Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Harris |
包装说明 | IN-LINE, R-PSIP-T3 |
Reach Compliance Code | unknow |
其他特性 | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 7 A |
集电极-发射极最大电压 | 600 V |
配置 | SINGLE |
门极发射器阈值电压最大值 | 6 V |
门极-发射极最大电压 | 20 V |
JEDEC-95代码 | TO-262AA |
JESD-30 代码 | R-PSIP-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 33 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | MOTOR CONTROL |
晶体管元件材料 | SILICON |
标称断开时间 (toff) | 220 ns |
标称接通时间 (ton) | 16 ns |
HGT1S3N60B3 | HGTP3N60B3 | HGT1S3N60B3S9A | HGTD3N60B3S9A | HGT1S3N60B3S | |
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描述 | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC PACKAGE-3 | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4 | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC PACKAGE-4 | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4 |
厂商名称 | Harris | Harris | Harris | Harris | Harris |
包装说明 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknow | unknown | unknown | unknown | unknow |
其他特性 | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 7 A | 7 A | 7 A | 7 A | 7 A |
集电极-发射极最大电压 | 600 V | 600 V | 600 V | 600 V | 600 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
JEDEC-95代码 | TO-262AA | TO-220AB | TO-263AB | TO-252AA | TO-263AB |
JESD-30 代码 | R-PSIP-T3 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 2 | 2 | 2 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | YES | YES | YES |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
标称断开时间 (toff) | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns |
标称接通时间 (ton) | 16 ns | 16 ns | 16 ns | 16 ns | 16 ns |
是否Rohs认证 | 不符合 | 不符合 | - | - | 不符合 |
门极发射器阈值电压最大值 | 6 V | 6 V | - | - | 6 V |
门极-发射极最大电压 | 20 V | 20 V | - | - | 20 V |
JESD-609代码 | e0 | e0 | - | - | e0 |
最高工作温度 | 150 °C | 150 °C | - | - | 150 °C |
最大功率耗散 (Abs) | 33 W | 33 W | - | - | 33 W |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) |
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