Datasheet> 器件分类 > 分立半导体> 晶体管> RN2106(TE85L,F)

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RN2106(TE85L,F): 产品描述PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416; 产品类别分立半导体晶体管; 文件大小573KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2106(TE85L,F)概述

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

RN2106(TE85L,F)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	80
元件数量	1
极性/信道类型	PNP
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON

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RN2101∼RN2106

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101, RN2102, RN2103,

RN2104, RN2105, RN2106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1101~RN1106

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2101

RN2102

RN2103

RN2104

RN2105

RN2106

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

SSM

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2101~2106

RN2101~2104

RN2105, 2106

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

100

150

−55~150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2013-01-23

RN2106(TE85L,F)相似产品对比

	RN2106(TE85L,F)	RN2101(TE85L,F)	RN2104(TE85L,F)	RN2103(TE85L,F)	RN2105(TE85L,F)
描述	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
是否Rohs认证	符合	符合	符合	符合	符合
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	80	30	80	70	80
元件数量	1	1	1	1	1
极性/信道类型	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
表面贴装	YES	YES	YES	YES	YES
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Toshiba(东芝)	-	-	Toshiba(东芝)	Toshiba(东芝)

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