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RN2104MFV(TL3PAV)

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
产品类别分立半导体    晶体管   
文件大小201KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN2104MFV(TL3PAV)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

RN2104MFV(TL3PAV)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)80
JESD-30 代码R-PDSO-F3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz

文档预览

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RN2101MFV∼RN2106MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2101MFV, RN2102MFV, RN2103MFV
RN2104MFV, RN2105MFV, RN2106MFV
0.22 ± 0.05
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Ultra-small package, suited to very high density mounting
0.8 ± 0.05
1.2 ± 0.05
Unit: mm
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
0.4
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN1101MFV to RN1106MFV
1
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resistor Values
Type No.
RN2101MFV
RN2102MFV
RN2103MFV
RN2104MFV
RN2105MFV
RN2106MFV
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.5 ± 0.05
1. BASE
VESM
2. EMITTER
3. COLLECTOR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101MFV to 2106MFV
RN2101MFV to 2106MFV
RN2101MFV to 2104MFV
RN2105MFV, 2106MFV
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
−50
−50
−10
−5
−100
150
150
−55
to 150
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mm)
0.5
0.45
Land Pattern Example
Unit: mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2014-03-01

RN2104MFV(TL3PAV)相似产品对比

RN2104MFV(TL3PAV) RN2101MFV(TL3PAV) RN2104MFV(TL3SAN) RN2104MFV(TL3MAA) RN2106MFV(TL3MAA) RN2102MFV(TL3MAA) RN2105MFV(TL3PAV) RN2102MFV(TL3PAV)
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
包装说明 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code unknow unknown unknown unknown unknown unknown unknown unknown
其他特性 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 10 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 21.36 BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 30 80 80 80 50 80 50
JESD-30 代码 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP
表面贴装 YES YES YES YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
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