Datasheet> 器件分类 > 分立半导体> 晶体管> RN2102MFV(TL3PAV)

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RN2102MFV(TL3PAV): 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon; 产品类别分立半导体晶体管; 文件大小201KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2102MFV(TL3PAV)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

RN2102MFV(TL3PAV)规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	50
JESD-30 代码	R-PDSO-F3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz

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RN2101MFV∼RN2106MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2101MFV, RN2102MFV, RN2103MFV

RN2104MFV, RN2105MFV, RN2106MFV

0.22 ± 0.05

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Ultra-small package, suited to very high density mounting

0.8 ± 0.05

1.2 ± 0.05

Unit: mm

1.2 ± 0.05

0.32 ± 0.05

0.80 ± 0.05

0.4

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1101MFV to RN1106MFV

0.4

0.13 ± 0.05

Equivalent Circuit and Bias Resistor Values

Type No.

RN2101MFV

RN2102MFV

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

0.5 ± 0.05

1. BASE

VESM

2. EMITTER

3. COLLECTOR

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2101MFV to 2106MFV

RN2101MFV to 2104MFV

RN2105MFV, 2106MFV

Symbol

CBO

CEO

EBO

(Note 1)

stg

Rating

−50

−10

−5

−100

150

−55

to 150

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

25.4 mm

1.6 mm)

0.5

0.45

Land Pattern Example

Unit: mm

1.15

0.4

0.45

0.4

Start of commercial production

2005-02

2014-03-01

RN2102MFV(TL3PAV)相似产品对比

	RN2102MFV(TL3PAV)	RN2101MFV(TL3PAV)	RN2104MFV(TL3SAN)	RN2104MFV(TL3MAA)	RN2106MFV(TL3MAA)	RN2102MFV(TL3MAA)	RN2105MFV(TL3PAV)	RN2104MFV(TL3PAV)
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
包装说明	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 10	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 21.36	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	50	30	80	80	80	50	80	80
JESD-30 代码	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
厂商名称	Toshiba(东芝)	-	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)

RN2102MFV(TL3PAV)

RN2102MFV(TL3PAV)概述

RN2102MFV(TL3PAV)规格参数

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