TA449..W
TA449..W
Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4681-4.1
DS4681-5.0 January 2000
APPLICATIONS
s
UPS
s
Induction Heating
s
A.C. Motor Drives
s
Switch Mode Power Supplies
s
Choppers
KEY PARAMETERS
V
DRM
1400V
I
T(RMS)
400A
I
TSM
4000A
dVdt
1000V/
µ
s
dI/dt
1000A/
µ
s
t
q
10.0
µ
s
FEATURES
s
Low Loss Asymmetrical Diffusion Structure
s
Fully Characterised For Operation up to 20kHz
s
High dI/dt and dV/dt ratings
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
1400
1200
1000
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
Outline type code: MU86.
See Package Details for further information.
TA449 14 W
TA449 12 W
TA449 10 W
Lower voltage grades available.
CURRENT AND SURGE RATINGS
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
Mean on-state current
RMS value
Surge (non-repetitive) on-state current
I
2
t for fusing
Half sine wave, duty cycle 50%,
T
case
= 80
o
C, T
j
= 125˚C.
T
j
= 125
o
C, t
p
= 1ms, V
R
= 0
t
p
≥
10ms
255
400
4000
80 x 10
3
A
A
A
A
2
s
Parameter
Conditions
Max.
Units
1/12
TA449..W
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 5.0kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-40
4.5
125
150
5.5
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.07
0.133
0.154
0.02
0.04
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
DYNAMIC CHARACTERISTICS
Symbol
V
TM
I
RRM
I
DRM
dV/dt
dI/dt
Parameter
Maximum on-state voltage
Peak reverse current
Off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Conditions
At 600A peak, T
case
= 125
o
C
At V
RRM
, T
case
= 125
o
C
At V
DRM
, T
case
= 125
o
C
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Gate source 20V, 20Ω
t
r
≤
5µs.
Non-repetitive
Repetitive
I
H
I
L
t
q
Holding current
Latching current
Max. turn-off time
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
T
j
= 25
o
C, I
G
= 0.5A, V
D
= 12V
VR = DF451 voltage drop,
T
j
= 125
o
C, I
TM
= 200A,
dV/dt = 400V/µs (linear to 60% V
DRM
),
tdI
R
/dt = 30A/µs Gate open.
Typ.
-
-
-
-
-
-
-
-
-
Max.
2.9
40
1
1000
1000
500
80
300
10
Units
V
mA
mA
V/µs
A/µs
A/µs
mA
mA
µs
t
gt
t
gd
Typ. turn-on time (total)
Typ. delay time
T
j
= 25
o
C, I
T
= 50A,
V
D
= 300V, I
G
= 1A, dI/dt = 50A/µs,
dI
G
/dt = 1A/µs
3
1.5
-
-
µs
µs
2/12
TA449..W
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Min. non trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Average gate power
Conditions
V
DWM
= 12V, R
L
= 3Ω, T
case
= 25
o
C
V
DWM
= 12V, R
L
= 3Ω, T
case
= 25
o
C
-
-
-
-
Average time 10ms max
Min.
-
-
0.2
-
-
-
-
Max.
5
400
-
5
4
16
3
Units
V
mA
V
V
A
W
W
3/12
TA449..W
CURVES
Notes:
1. V
D
≤
600V.
2. V
R
≤
1V.
3. R.C. snubber. C = 0.22µF, R = 4.7Ω.
4. Double side cooled.
Fig.1 Energy per pulse for sinusoidal pulses.
Notes:
1. V
D
≤
600V.
2. V
R
= 1V.
3. R.C. snubber. C = 0.22µF, R = 4.7Ω.
4. Double side cooled.
Fig.2 Maximum allowable peak on-state current vs pulse width for T
case
= 65˚C.
4/12
TA449..W
Notes:
1. V
D
≤
600V.
2. V
R
= 1V.
3. R.C. snubber. C = 0.22µF, R = 4.7Ω.
4. Double side cooled.
Fig.3 Maximum allowable peak on-state current vs pulse width for T
case
= 90˚C.
Notes:
1. dI/dt = 25A/µs.
2. V
D
≤
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22µF, R = 4.7Ω.
5. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
5/12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
