Datasheet> 器件分类 > 分立半导体> 二极管> SM8S40

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SM8S40: 产品描述Trans Voltage Suppressor Diode, 6600W, 40V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2; 产品类别分立半导体二极管; 文件大小168KB，共3页; 制造商EIC [EIC discrete Semiconductors]; 标准

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SM8S40概述

Trans Voltage Suppressor Diode, 6600W, 40V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2

SM8S40规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	EIC [EIC discrete Semiconductors]
包装说明	R-PSSO-G2
Reach Compliance Code	compli
ECCN代码	EAR99
其他特性	EXCELLENT CLAMPING CAPABILITY
最大击穿电压	54.3 V
最小击穿电压	44.4 V
外壳连接	ANODE
配置	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
最大非重复峰值反向功率耗散	6600 W
元件数量	2
端子数量	2
最高工作温度	175 °C
最低工作温度	-55 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性	UNIDIRECTIONAL
最大功率耗散	8 W
最大重复峰值反向电压	40 V
表面贴装	YES
技术	AVALANCHE
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED

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Certificate TH97/10561QM

Certificate TW00/17276EM

SM8S SERIES

Stand-off Voltage: 10 to 43 Volts

Peak Pulse Power: 6600W(10/1000μs)

: 5200W(10/10,000μs)

FEATURES :

* Excellent clamping capability

* Low incremental surge resistance

* Fast response time : typically less

then 1.0 ps from 0 volt to V

BR(min.)

* Dual Diode construction

* Pb / RoHS Free

SURFACE MOUNT

TRANSIENT VOLTAGE SUPPRESSOR

PAK

0.409(10.4)

0.387(9.80)

0.189(4.8)

0.137(4.4)

0.055(1.4)

0.047(1.2)

0.357(9.1)

0.335(8.5)

0.418(10.6)

0.378(9.60)

1 2

0.110(2.8)

0.055(1.4)

0.039(1.0)

0.108(2.75)

0.092(2.35)

0.236(6.0)

0.197(5.0)

0.026(0.7)

0.011(0.3)

MECHANICAL DATA

* Case : D PAK(TO-263)

* Epoxy : UL94V-O rate flame retardant

* Lead : Surface Mount per J-STD-020C,

Method 208 guaranteed

* Polarity : Heatsink is Anode

* Mounting position : Any

* Weight : 1.7 grams (approximately)

0.035(0.9)max.

0.108(2.75)

0.092(2.35)

0.33(8.38)

Cathode

2. Heatsink

3. Cathode

0.42(10.66)

0.24(6.096)

0.63(17.02)

DEVICES FOR UNIPOLAR APPLICATIONS

For uni-directional without "C"

Electrical characteristics apply in both directions

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics

= 25°C unless otherwise noted)

Rating

Peak Pulse Power Dissipation with 10/1000μs waveform

10/10,000μs waveform

Steady State Power Dissipation

Peak Forward Surge Current,

8.3ms Single Half Sine-Wave

Typical Thermal Resistance Junction to Case

Operating and Storage Temperature Range

Symbol

PPM

FSM

, T

STG

Value

6600

5200

8.0

700

0.9

- 55 to + 175

Unit

°C/W

°C

Page 1 of 3

Rev. 03 : August 8, 2006

SM8S40相似产品对比

	SM8S40	SM8S16A	SM8S17A	SM8S40A	SM8S20A	SM8S22A	SM8S30A	SM8S28A	SM8S13CA	SM8S30
描述	Trans Voltage Suppressor Diode, 6600W, 40V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 16V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 17V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 40V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 20V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 22V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 30V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 28V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 13V V(RWM), Bidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2	Trans Voltage Suppressor Diode, 6600W, 30V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合	符合
包装说明	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
其他特性	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY	EXCELLENT CLAMPING CAPABILITY
最大击穿电压	54.3 V	19.7 V	20.9 V	49.1 V	24.5 V	26.9 V	36.8 V	34.4 V	15.9 V	40.7 V
最小击穿电压	44.4 V	17.8 V	18.9 V	44.4 V	22.2 V	24.4 V	33.3 V	31.1 V	14.4 V	33.3 V
外壳连接	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE
配置	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
最大非重复峰值反向功率耗散	6600 W	6600 W	6600 W	6600 W	6600 W	6600 W	6600 W	6600 W	6600 W	6600 W
元件数量	2	2	2	2	2	2	2	2	2	2
端子数量	2	2	2	2	2	2	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	BIDIRECTIONAL	UNIDIRECTIONAL
最大功率耗散	8 W	8 W	8 W	8 W	8 W	8 W	8 W	8 W	8 W	8 W
最大重复峰值反向电压	40 V	16 V	17 V	40 V	20 V	22 V	30 V	28 V	13 V	30 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
厂商名称	EIC [EIC discrete Semiconductors]	-	-	-	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]

SM8S40

SM8S40概述

SM8S40规格参数

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